JPS51139273A - Mis device - Google Patents

Mis device

Info

Publication number
JPS51139273A
JPS51139273A JP50062859A JP6285975A JPS51139273A JP S51139273 A JPS51139273 A JP S51139273A JP 50062859 A JP50062859 A JP 50062859A JP 6285975 A JP6285975 A JP 6285975A JP S51139273 A JPS51139273 A JP S51139273A
Authority
JP
Japan
Prior art keywords
mis device
mis
reduce
capacitor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50062859A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50062859A priority Critical patent/JPS51139273A/en
Publication of JPS51139273A publication Critical patent/JPS51139273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce voltage variations of the capacitance of a capacitor element in an MIS device having a transistor of a self-aligning gate structure such as a Si gate MIS IC and also reduce the area of the capacitor occupied in the derice.
JP50062859A 1975-05-28 1975-05-28 Mis device Pending JPS51139273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50062859A JPS51139273A (en) 1975-05-28 1975-05-28 Mis device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50062859A JPS51139273A (en) 1975-05-28 1975-05-28 Mis device

Publications (1)

Publication Number Publication Date
JPS51139273A true JPS51139273A (en) 1976-12-01

Family

ID=13212432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50062859A Pending JPS51139273A (en) 1975-05-28 1975-05-28 Mis device

Country Status (1)

Country Link
JP (1) JPS51139273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155462U (en) * 1980-04-21 1981-11-20
JPS56153777A (en) * 1980-04-28 1981-11-27 Nec Corp Semiconductor capacity element
JPS63174465U (en) * 1988-04-28 1988-11-11

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985975A (en) * 1972-12-20 1974-08-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985975A (en) * 1972-12-20 1974-08-17

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155462U (en) * 1980-04-21 1981-11-20
JPS56153777A (en) * 1980-04-28 1981-11-27 Nec Corp Semiconductor capacity element
JPS63174465U (en) * 1988-04-28 1988-11-11

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