JPS51146188A - Diode device - Google Patents

Diode device

Info

Publication number
JPS51146188A
JPS51146188A JP50070367A JP7036775A JPS51146188A JP S51146188 A JPS51146188 A JP S51146188A JP 50070367 A JP50070367 A JP 50070367A JP 7036775 A JP7036775 A JP 7036775A JP S51146188 A JPS51146188 A JP S51146188A
Authority
JP
Japan
Prior art keywords
diode device
cmos
trouble
protect
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50070367A
Other languages
Japanese (ja)
Other versions
JPS616553B2 (en
Inventor
Koichi Mikome
Shiro Araya
Mitsumasa Ashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50070367A priority Critical patent/JPS51146188A/en
Publication of JPS51146188A publication Critical patent/JPS51146188A/en
Publication of JPS616553B2 publication Critical patent/JPS616553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:A diode device, that prevents generation of thyristor effect without any trouble to protect a gate SiO2 film at CMOS, IC.
JP50070367A 1975-06-11 1975-06-11 Diode device Granted JPS51146188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070367A JPS51146188A (en) 1975-06-11 1975-06-11 Diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070367A JPS51146188A (en) 1975-06-11 1975-06-11 Diode device

Publications (2)

Publication Number Publication Date
JPS51146188A true JPS51146188A (en) 1976-12-15
JPS616553B2 JPS616553B2 (en) 1986-02-27

Family

ID=13429386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070367A Granted JPS51146188A (en) 1975-06-11 1975-06-11 Diode device

Country Status (1)

Country Link
JP (1) JPS51146188A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211884A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS57157558A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Complementary mis integrated circuit device
JPS58159369A (en) * 1982-03-18 1983-09-21 Nec Corp Complementary mos integrated circuit device
JPS59111351A (en) * 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd Protective circuit for input
JP2015138394A (en) * 2014-01-22 2015-07-30 セイコーインスツル株式会社 Voltage regulator
JP2023026061A (en) * 2021-08-12 2023-02-24 富士電機株式会社 Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100673421B1 (en) * 1996-11-07 2007-01-23 가부시키가이샤 히타치세이사쿠쇼 Semiconductor integrated circuit device and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211884A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS57157558A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Complementary mis integrated circuit device
JPS58159369A (en) * 1982-03-18 1983-09-21 Nec Corp Complementary mos integrated circuit device
JPS59111351A (en) * 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd Protective circuit for input
JP2015138394A (en) * 2014-01-22 2015-07-30 セイコーインスツル株式会社 Voltage regulator
JP2023026061A (en) * 2021-08-12 2023-02-24 富士電機株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPS616553B2 (en) 1986-02-27

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