JPS51147280A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51147280A
JPS51147280A JP50070826A JP7082675A JPS51147280A JP S51147280 A JPS51147280 A JP S51147280A JP 50070826 A JP50070826 A JP 50070826A JP 7082675 A JP7082675 A JP 7082675A JP S51147280 A JPS51147280 A JP S51147280A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
implantation
gate
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50070826A
Other languages
Japanese (ja)
Inventor
Shinya Oba
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50070826A priority Critical patent/JPS51147280A/en
Publication of JPS51147280A publication Critical patent/JPS51147280A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To provide a memory system with larger output signals and high integration by implantation of signal charges from a semiconductor substrate of different type from a semiconductor to become a channel to the bottom of the gate, using a deep depression type MOST.
COPYRIGHT: (C)1976,JPO&Japio
JP50070826A 1975-06-13 1975-06-13 Semiconductor device Pending JPS51147280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070826A JPS51147280A (en) 1975-06-13 1975-06-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070826A JPS51147280A (en) 1975-06-13 1975-06-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51147280A true JPS51147280A (en) 1976-12-17

Family

ID=13442764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070826A Pending JPS51147280A (en) 1975-06-13 1975-06-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51147280A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384577A (en) * 1976-12-30 1978-07-26 Ibm Nonndestructive reading dynamic semiconductor memory
JPS54110742A (en) * 1978-02-17 1979-08-30 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device
JPS55115355A (en) * 1979-02-28 1980-09-05 Nec Corp Mos type memory
JPS60182776A (en) * 1984-02-29 1985-09-18 Agency Of Ind Science & Technol non-volatile semiconductor memory
JP2009544166A (en) * 2006-07-17 2009-12-10 マイクロン テクノロジー， インク． Capacitorless one-transistor DRAM cell, integrated circuit including an array of capacitorless one-transistor DRAM cells, and a method of forming a line of capacitorless one-transistor DRAM cells
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384577A (en) * 1976-12-30 1978-07-26 Ibm Nonndestructive reading dynamic semiconductor memory
JPS54110742A (en) * 1978-02-17 1979-08-30 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device
JPS55115355A (en) * 1979-02-28 1980-09-05 Nec Corp Mos type memory
JPS60182776A (en) * 1984-02-29 1985-09-18 Agency Of Ind Science & Technol non-volatile semiconductor memory
JP2009544166A (en) * 2006-07-17 2009-12-10 マイクロン テクノロジー， インク． Capacitorless one-transistor DRAM cell, integrated circuit including an array of capacitorless one-transistor DRAM cells, and a method of forming a line of capacitorless one-transistor DRAM cells
US9129847B2 (en) 2006-07-17 2015-09-08 Micron Technology, Inc. Transistor structures and integrated circuitry comprising an array of transistor structures
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

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