JPS51148392A - Hetero juntion optical detector - Google Patents

Hetero juntion optical detector

Info

Publication number
JPS51148392A
JPS51148392A JP51064708A JP6470876A JPS51148392A JP S51148392 A JPS51148392 A JP S51148392A JP 51064708 A JP51064708 A JP 51064708A JP 6470876 A JP6470876 A JP 6470876A JP S51148392 A JPS51148392 A JP S51148392A
Authority
JP
Japan
Prior art keywords
juntion
hetero
optical detector
detector
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51064708A
Other languages
English (en)
Inventor
Edowaado Nahorii Robaato
Perin Piasaru Toomasu
Aran Pooratsuku Maachin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS51148392A publication Critical patent/JPS51148392A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/005—Antimonides of gallium or indium

Landscapes

  • Light Receiving Elements (AREA)
JP51064708A 1975-06-05 1976-06-04 Hetero juntion optical detector Pending JPS51148392A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/583,964 US3995303A (en) 1975-06-05 1975-06-05 Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector

Publications (1)

Publication Number Publication Date
JPS51148392A true JPS51148392A (en) 1976-12-20

Family

ID=24335344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51064708A Pending JPS51148392A (en) 1975-06-05 1976-06-04 Hetero juntion optical detector

Country Status (6)

Country Link
US (1) US3995303A (ja)
JP (1) JPS51148392A (ja)
CA (1) CA1059230A (ja)
DE (1) DE2624348A1 (ja)
GB (1) GB1531633A (ja)
NL (1) NL7605855A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580375A (en) * 1978-12-13 1980-06-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor photoreceptor
JPS56167373A (en) * 1980-05-27 1981-12-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light sensor
JPS577978A (en) * 1980-06-18 1982-01-16 Nippon Telegr & Teleph Corp <Ntt> Opto-electronic switch
JPS5736878A (en) * 1980-08-18 1982-02-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor photodetector
JP2019039712A (ja) * 2017-08-23 2019-03-14 富士通株式会社 赤外線検出器及びその製造方法、撮像素子、撮像システム
JP2020184622A (ja) * 2019-04-30 2020-11-12 アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ 積層型高ブロッキングｉｉｉ−ｖ半導体パワーダイオード

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053920A (en) * 1975-11-10 1977-10-11 The United States Of America As Represented By The Secretary Of The Army Step graded photocathode
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4207122A (en) * 1978-01-11 1980-06-10 International Standard Electric Corporation Infra-red light emissive devices
US4158577A (en) * 1978-07-05 1979-06-19 Milnes Arthur G High output solar cells
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
FR2435816A1 (fr) * 1978-09-08 1980-04-04 Radiotechnique Compelec Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction
JPS5696834A (en) * 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector
US4390889A (en) * 1980-10-09 1983-06-28 Bell Telephone Laboratories, Incorporated Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4473835A (en) * 1981-06-19 1984-09-25 At&T Bell Laboratories Long wavelength avalanche photodetector
US4518979A (en) * 1982-06-30 1985-05-21 International Business Machines Corporation Semiconductor transistor with graded base and collector
US4518255A (en) * 1982-08-20 1985-05-21 Mcdonnell Douglas Corporation Temperature tracking range finder
US4568959A (en) * 1983-06-02 1986-02-04 International Business Machines Corporation Photomultiplier
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US5221367A (en) * 1988-08-03 1993-06-22 International Business Machines, Corp. Strained defect-free epitaxial mismatched heterostructures and method of fabrication
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5084409A (en) * 1990-06-26 1992-01-28 Texas Instruments Incorporated Method for patterned heteroepitaxial growth
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
JP2001358359A (ja) * 2000-06-16 2001-12-26 Nippon Sheet Glass Co Ltd 半導体受光素子
US20040086221A1 (en) * 2002-11-06 2004-05-06 Wei Qiu Low cost, hybrid integrated dense wavelength division multiplexer/demultiplexer for fiber optical networks
US7755023B1 (en) * 2007-10-09 2010-07-13 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
CN113284973B (zh) * 2021-05-14 2022-07-05 长春理工大学 一种高响应度的雪崩光电二极管结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675026A (en) * 1969-06-30 1972-07-04 Ibm Converter of electromagnetic radiation to electrical power
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US3814993A (en) * 1972-11-15 1974-06-04 Us Navy Tuneable infrared photocathode
GB1418002A (en) * 1972-11-24 1975-12-17 Mullard Ltd Photocathode manufacture
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580375A (en) * 1978-12-13 1980-06-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor photoreceptor
JPS56167373A (en) * 1980-05-27 1981-12-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light sensor
JPS577978A (en) * 1980-06-18 1982-01-16 Nippon Telegr & Teleph Corp <Ntt> Opto-electronic switch
JPS5736878A (en) * 1980-08-18 1982-02-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor photodetector
JP2019039712A (ja) * 2017-08-23 2019-03-14 富士通株式会社 赤外線検出器及びその製造方法、撮像素子、撮像システム
JP2020184622A (ja) * 2019-04-30 2020-11-12 アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ 積層型高ブロッキングｉｉｉ−ｖ半導体パワーダイオード

Also Published As

Publication number Publication date
US3995303A (en) 1976-11-30
GB1531633A (en) 1978-11-08
DE2624348A1 (de) 1976-12-16
NL7605855A (nl) 1976-12-07
CA1059230A (en) 1979-07-24

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