JPS51149882A - Chemical condensation apparatus - Google Patents
Chemical condensation apparatusInfo
- Publication number
- JPS51149882A JPS51149882A JP50074887A JP7488775A JPS51149882A JP S51149882 A JPS51149882 A JP S51149882A JP 50074887 A JP50074887 A JP 50074887A JP 7488775 A JP7488775 A JP 7488775A JP S51149882 A JPS51149882 A JP S51149882A
- Authority
- JP
- Japan
- Prior art keywords
- condensation apparatus
- chemical condensation
- heating furnace
- chemical
- low voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:A chemical condensation apparatus used at low voltage which can optionally change the temperature distribution by using a combined infrared heating furnace and resistance heating furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50074887A JPS51149882A (en) | 1975-06-18 | 1975-06-18 | Chemical condensation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50074887A JPS51149882A (en) | 1975-06-18 | 1975-06-18 | Chemical condensation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51149882A true JPS51149882A (en) | 1976-12-23 |
| JPS5760423B2 JPS5760423B2 (en) | 1982-12-20 |
Family
ID=13560316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50074887A Granted JPS51149882A (en) | 1975-06-18 | 1975-06-18 | Chemical condensation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51149882A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
| JPS58176114A (en) * | 1982-04-12 | 1983-10-15 | Toshiba Corp | Apparatus for manufacturing silicon photosensitive material |
| JPS5965734U (en) * | 1982-10-21 | 1984-05-02 | 富士通株式会社 | chemical vapor deposition equipment |
| JPS59163820A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Chemical vapor phase growth device |
| JPS6126773A (en) * | 1984-07-16 | 1986-02-06 | Canon Inc | Formation of accumulated film |
| JPS62222631A (en) * | 1986-03-24 | 1987-09-30 | Nec Corp | Vapor growth equipment |
| JP2022089129A (en) * | 2020-12-03 | 2022-06-15 | ウシオライティング株式会社 | Heating unit and heating device |
-
1975
- 1975-06-18 JP JP50074887A patent/JPS51149882A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
| JPS58176114A (en) * | 1982-04-12 | 1983-10-15 | Toshiba Corp | Apparatus for manufacturing silicon photosensitive material |
| JPS5965734U (en) * | 1982-10-21 | 1984-05-02 | 富士通株式会社 | chemical vapor deposition equipment |
| JPS59163820A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Chemical vapor phase growth device |
| JPS6126773A (en) * | 1984-07-16 | 1986-02-06 | Canon Inc | Formation of accumulated film |
| JPS62222631A (en) * | 1986-03-24 | 1987-09-30 | Nec Corp | Vapor growth equipment |
| JP2022089129A (en) * | 2020-12-03 | 2022-06-15 | ウシオライティング株式会社 | Heating unit and heating device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5760423B2 (en) | 1982-12-20 |
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