JPS5144475A - - Google Patents
Info
- Publication number
- JPS5144475A JPS5144475A JP49117159A JP11715974A JPS5144475A JP S5144475 A JPS5144475 A JP S5144475A JP 49117159 A JP49117159 A JP 49117159A JP 11715974 A JP11715974 A JP 11715974A JP S5144475 A JPS5144475 A JP S5144475A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Control Of Temperature (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49117159A JPS5144475A (de) | 1974-10-14 | 1974-10-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49117159A JPS5144475A (de) | 1974-10-14 | 1974-10-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5144475A true JPS5144475A (de) | 1976-04-16 |
Family
ID=14704903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49117159A Pending JPS5144475A (de) | 1974-10-14 | 1974-10-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5144475A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS549169A (en) * | 1977-06-24 | 1979-01-23 | Toshiba Corp | Method of producing single crystal |
| JPS5435751U (de) * | 1977-08-15 | 1979-03-08 | ||
| JPS59184795A (ja) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | 3−5族化合物半導体単結晶の製造方法 |
-
1974
- 1974-10-14 JP JP49117159A patent/JPS5144475A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS549169A (en) * | 1977-06-24 | 1979-01-23 | Toshiba Corp | Method of producing single crystal |
| JPS5435751U (de) * | 1977-08-15 | 1979-03-08 | ||
| JPS59184795A (ja) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | 3−5族化合物半導体単結晶の製造方法 |
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