JPS516679A - - Google Patents

Info

Publication number: JPS516679A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP49071969A

Other versions

JPS5433917B2 (ja

Inventor

Bitsukusuraa Fuoraa Aran

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-06-29

Filing date

1974-06-25

Publication date

1976-01-20

1974-06-25 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1976-01-20 Publication of JPS516679A publication Critical patent/JPS516679A/ja

1979-10-23 Publication of JPS5433917B2 publication Critical patent/JPS5433917B2/ja

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

Formation Of Insulating Films (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

JP7196974A 1973-06-29 1974-06-25 Expired JPS5433917B2 (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US00375283A US3849204A (en)	1973-06-29	1973-06-29	Process for the elimination of interface states in mios structures

Publications (2)

Publication Number	Publication Date
JPS516679A true JPS516679A (ja)	1976-01-20
JPS5433917B2 JPS5433917B2 (ja)	1979-10-23

Family

ID=23480255

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP7196974A Expired JPS5433917B2 (ja)	1973-06-29	1974-06-25

Country Status (5)

Country	Link
US (1)	US3849204A (ja)
JP (1)	JPS5433917B2 (ja)
CA (1)	CA994924A (ja)
DE (1)	DE2422195C2 (ja)
GB (1)	GB1454237A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02218132A (ja) *	1989-02-20	1990-08-30	Nec Corp	半導体装置の製造方法
JP2009120482A (ja) *	1996-09-30	2009-06-04	Xerox Corp	酸化物カプセル化材料の水素化の強化方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3923559A (en) *	1975-01-13	1975-12-02	Bell Telephone Labor Inc	Use of trapped hydrogen for annealing metal-oxide-semiconductor devices
DE2507366C3 (de) *	1975-02-20	1980-06-26	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Verfahren zur Unterdrückung parasitärer Schaltungselemente
US4047976A (en) *	1976-06-21	1977-09-13	Motorola, Inc.	Method for manufacturing a high-speed semiconductor device
US4364779A (en) *	1980-08-04	1982-12-21	Bell Telephone Laboratories, Incorporated	Fabrication of semiconductor devices including double annealing steps for radiation hardening
US4447272A (en) *	1982-11-22	1984-05-08	The United States Of America As Represented By The Secretary Of The Navy	Method for fabricating MNOS structures utilizing hydrogen ion implantation
US4522657A (en) *	1983-10-20	1985-06-11	Westinghouse Electric Corp.	Low temperature process for annealing shallow implanted N+/P junctions
JPH0687503B2 (ja) *	1987-03-11	1994-11-02	株式会社日立製作所	薄膜半導体装置
JP2589327B2 (ja) *	1987-11-14	1997-03-12	株式会社リコー	薄膜トランジスタの製造方法
DE4306565C2 (de) *	1993-03-03	1995-09-28	Telefunken Microelectron	Verfahren zur Herstellung eines blauempfindlichen Photodetektors
US5387530A (en) *	1993-06-29	1995-02-07	Digital Equipment Corporation	Threshold optimization for soi transistors through use of negative charge in the gate oxide
US5407850A (en) *	1993-06-29	1995-04-18	Digital Equipment Corporation	SOI transistor threshold optimization by use of gate oxide having positive charge
JPH07153769A (ja) *	1993-11-30	1995-06-16	Hitachi Ltd	半導体集積回路装置の製造方法および製造装置
US5620906A (en)	1994-02-28	1997-04-15	Semiconductor Energy Laboratory Co., Ltd.	Method for producing semiconductor device by introducing hydrogen ions
US5897346A (en) *	1994-02-28	1999-04-27	Semiconductor Energy Laboratory Co., Ltd.	Method for producing a thin film transistor
US6489219B1 (en)	1995-11-09	2002-12-03	Micron Technology, Inc.	Method of alloying a semiconductor device
US5872387A (en) *	1996-01-16	1999-02-16	The Board Of Trustees Of The University Of Illinois	Deuterium-treated semiconductor devices
US20020031920A1 (en)	1996-01-16	2002-03-14	Lyding Joseph W.	Deuterium treatment of semiconductor devices
JP3865145B2 (ja) *	1996-01-26	2007-01-10	株式会社半導体エネルギー研究所	半導体装置の作製方法
US6071751A (en) *	1997-04-28	2000-06-06	Texas Instruments Incorporated	Deuterium sintering with rapid quenching
US6328801B1 (en)	1997-07-25	2001-12-11	L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude	Method and system for recovering and recirculating a deuterium-containing gas
US6143631A (en)	1998-05-04	2000-11-07	Micron Technology, Inc.	Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon
FR2784796B1 (fr) *	1998-10-15	2001-11-23	Commissariat Energie Atomique	Procede de realisation d'une couche de materiau enterree dans un autre materiau
US6268269B1 (en) *	1999-12-30	2001-07-31	United Microelectronics Corp.	Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects
US6576522B2 (en)	2000-12-08	2003-06-10	Agere Systems Inc.	Methods for deuterium sintering
US6603181B2 (en) *	2001-01-16	2003-08-05	International Business Machines Corporation	MOS device having a passivated semiconductor-dielectric interface
DE10334353A1 (de) *	2003-07-25	2005-02-17	Forschungszentrum Jülich GmbH	Verfahren zur Herstellung eines Kontaktes und elektronisches Bauelement, umfassend derartige Kontakte
US7407871B2 (en) *	2006-09-05	2008-08-05	Tech Semiconductor Singapore Pte Ltd	Method for passivation of plasma etch defects in DRAM devices
KR20100060652A (ko) *	2008-11-28	2010-06-07	주식회사 동부하이텍	반도체 소자의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3386163A (en) *	1964-08-26	1968-06-04	Ibm	Method for fabricating insulated-gate field effect transistor
US3540925A (en) *	1967-08-02	1970-11-17	Rca Corp	Ion bombardment of insulated gate semiconductor devices
US3513035A (en) *	1967-11-01	1970-05-19	Fairchild Camera Instr Co	Semiconductor device process for reducing surface recombination velocity
US3590477A (en) *	1968-12-19	1971-07-06	Ibm	Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
DE2056947C3 (de) *	1970-11-20	1975-12-18	Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen	Verfahren zur Stabilisierung von Halbleiteranordnungen

1973
- 1973-06-29 US US00375283A patent/US3849204A/en not_active Expired - Lifetime
1974
- 1974-05-08 DE DE2422195A patent/DE2422195C2/de not_active Expired
- 1974-05-16 GB GB2172674A patent/GB1454237A/en not_active Expired
- 1974-06-07 CA CA201,981A patent/CA994924A/en not_active Expired
- 1974-06-25 JP JP7196974A patent/JPS5433917B2/ja not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02218132A (ja) *	1989-02-20	1990-08-30	Nec Corp	半導体装置の製造方法
JP2009120482A (ja) *	1996-09-30	2009-06-04	Xerox Corp	酸化物カプセル化材料の水素化の強化方法

Also Published As

Publication number	Publication date
JPS5433917B2 (ja)	1979-10-23
DE2422195A1 (de)	1975-01-16
US3849204A (en)	1974-11-19
GB1454237A (en)	1976-11-03
DE2422195C2 (de)	1986-02-06
CA994924A (en)	1976-08-10

Publication	Publication Date	Title
AR201758A1 (ja)	1975-04-15
AU476761B2 (ja)	1976-09-30
AR201235Q (ja)	1975-02-21
AR201231Q (ja)	1975-02-21
AU474593B2 (ja)	1976-07-29
JPS5433917B2 (ja)	1979-10-23
AU465453B2 (ja)	1975-09-25
AU465434B2 (ja)	1975-09-25
AU450229B2 (ja)	1974-07-04
AU476714B2 (ja)	1976-09-30
AR201229Q (ja)	1975-02-21
AR199451A1 (ja)	1974-08-30
AU476696B2 (ja)	1976-09-30
AU472848B2 (ja)	1976-06-03
AU466283B2 (ja)	1975-10-23
AU476873B1 (ja)	1975-01-09
AU477823B2 (ja)	1975-06-19
AU471461B2 (ja)	1976-04-29
AR210729A1 (ja)	1977-09-15
AR200256A1 (ja)	1974-10-31
AU477824B2 (ja)	1975-07-17
AR195948A1 (ja)	1973-11-15
AR193950A1 (ja)	1973-05-31
AR197627A1 (ja)	1974-04-23
AR196382A1 (ja)	1973-12-18

JPS516679A - - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (1)

Publications (2)

Family

ID=23480255

Family Applications (1)

Country Status (5)

Cited By (2)

Families Citing this family (28)

Family Cites Families (5)

Cited By (2)

Also Published As

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