JPS52123342A - Method of growing silicon film on aluminum base plate - Google Patents

Method of growing silicon film on aluminum base plate

Info

Publication number
JPS52123342A
JPS52123342A JP3939876A JP3939876A JPS52123342A JP S52123342 A JPS52123342 A JP S52123342A JP 3939876 A JP3939876 A JP 3939876A JP 3939876 A JP3939876 A JP 3939876A JP S52123342 A JPS52123342 A JP S52123342A
Authority
JP
Japan
Prior art keywords
base plate
silicon film
aluminum base
growing silicon
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3939876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5440391B2 (2
Inventor
Tsuyoshi Saitou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3939876A priority Critical patent/JPS52123342A/ja
Publication of JPS52123342A publication Critical patent/JPS52123342A/ja
Publication of JPS5440391B2 publication Critical patent/JPS5440391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP3939876A 1976-04-09 1976-04-09 Method of growing silicon film on aluminum base plate Granted JPS52123342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3939876A JPS52123342A (en) 1976-04-09 1976-04-09 Method of growing silicon film on aluminum base plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3939876A JPS52123342A (en) 1976-04-09 1976-04-09 Method of growing silicon film on aluminum base plate

Publications (2)

Publication Number Publication Date
JPS52123342A true JPS52123342A (en) 1977-10-17
JPS5440391B2 JPS5440391B2 (2) 1979-12-03

Family

ID=12551877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3939876A Granted JPS52123342A (en) 1976-04-09 1976-04-09 Method of growing silicon film on aluminum base plate

Country Status (1)

Country Link
JP (1) JPS52123342A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024024452A (ja) * 2022-08-09 2024-02-22 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024024452A (ja) * 2022-08-09 2024-02-22 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5440391B2 (2) 1979-12-03

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