JPS52130581A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS52130581A
JPS52130581A JP4754976A JP4754976A JPS52130581A JP S52130581 A JPS52130581 A JP S52130581A JP 4754976 A JP4754976 A JP 4754976A JP 4754976 A JP4754976 A JP 4754976A JP S52130581 A JPS52130581 A JP S52130581A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
channels
channel stops
fiexed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4754976A
Other languages
Japanese (ja)
Other versions
JPS5724940B2 (en
Inventor
Yoshihiro Miyamoto
Osamu Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4754976A priority Critical patent/JPS52130581A/en
Publication of JPS52130581A publication Critical patent/JPS52130581A/en
Publication of JPS5724940B2 publication Critical patent/JPS5724940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To simplify the shape of the device by employing such structure wherein two lines of channel stops of the form being periodically fiexed are provided on a semiconductor substrate and a pair or transfer electrodes having the side edge portions flexed in synchronization with the channels are provided over the channels between said channel stops.
JP4754976A 1976-04-26 1976-04-26 Charge transfer device Granted JPS52130581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4754976A JPS52130581A (en) 1976-04-26 1976-04-26 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4754976A JPS52130581A (en) 1976-04-26 1976-04-26 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS52130581A true JPS52130581A (en) 1977-11-01
JPS5724940B2 JPS5724940B2 (en) 1982-05-26

Family

ID=12778224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4754976A Granted JPS52130581A (en) 1976-04-26 1976-04-26 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS52130581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103296022A (en) * 2012-12-21 2013-09-11 上海中航光电子有限公司 Switching circuit of display panel and display panel

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673659U (en) * 1993-03-12 1994-10-18 正敏 大畠 Preventive equipment for bath temperature drop

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146482U (en) * 1974-05-20 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146482U (en) * 1974-05-20 1975-12-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103296022A (en) * 2012-12-21 2013-09-11 上海中航光电子有限公司 Switching circuit of display panel and display panel

Also Published As

Publication number Publication date
JPS5724940B2 (en) 1982-05-26

Similar Documents

Publication Publication Date Title
IL56008A0 (en) Solar cells with low-cost silicon substrates and processes for the production thereof
JPS5347786A (en) Production of charge transfer device
JPS52130581A (en) Charge transfer device
JPS5351985A (en) Semiconductor wiring constitution
JPS5384462A (en) Silicon on sapphire structure
JPS5312634A (en) Manufacture of liquid crystal cells
JPS53125782A (en) Charge transfer device
JPS52129393A (en) Solar battery
JPS5374372A (en) Plasma cvd device
JPS536054A (en) Laminated waveguide type photo switching
JPS538571A (en) Manufacture of inverted-mesa type semiconductor device
CA963792A (en) Elastic substrate for solar cells
JPS5362483A (en) Charge transfer type semiconductor device
JPS5353278A (en) Facet zero input system for charge transfer device
JPS53149770A (en) Semiconductor device
JPS5360585A (en) Semiconductor device
JPS5294085A (en) Semiconductors
JPS5272187A (en) Charge transfer element
JPS5219978A (en) Manufacture process for a semiconductor device
JPS5289432A (en) Charge transfer variable delay device
JPS527757A (en) Photoelectric electrode substrate
JPS5318951A (en) Production of semiconductor device
JPS52130293A (en) Charge transfer device
JPS52132686A (en) Charge coupling element
JPS52149325A (en) Semiconductor rectifing device