JPS52142980A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS52142980A
JPS52142980A JP6037476A JP6037476A JPS52142980A JP S52142980 A JPS52142980 A JP S52142980A JP 6037476 A JP6037476 A JP 6037476A JP 6037476 A JP6037476 A JP 6037476A JP S52142980 A JPS52142980 A JP S52142980A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
reading out
out information
dynamic system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6037476A
Other languages
Japanese (ja)
Other versions
JPS571074B2 (en
Inventor
Hiroshi Nozawa
Kanji Hirabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6037476A priority Critical patent/JPS52142980A/en
Publication of JPS52142980A publication Critical patent/JPS52142980A/en
Publication of JPS571074B2 publication Critical patent/JPS571074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a non-volatile semiconductor memory of higher integration and lower costs by making possible the use of a dynamic system in reading out information from memory cells.
JP6037476A 1976-05-25 1976-05-25 Non-volatile semiconductor memory Granted JPS52142980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6037476A JPS52142980A (en) 1976-05-25 1976-05-25 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6037476A JPS52142980A (en) 1976-05-25 1976-05-25 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS52142980A true JPS52142980A (en) 1977-11-29
JPS571074B2 JPS571074B2 (en) 1982-01-09

Family

ID=13140284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6037476A Granted JPS52142980A (en) 1976-05-25 1976-05-25 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS52142980A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110384A (en) * 1977-03-08 1978-09-27 Fujitsu Ltd Semiconductor memory device
JPS57180183A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor memory device
JPS59147461A (en) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd semiconductor non-volatile memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110384A (en) * 1977-03-08 1978-09-27 Fujitsu Ltd Semiconductor memory device
JPS57180183A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor memory device
JPS59147461A (en) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd semiconductor non-volatile memory

Also Published As

Publication number Publication date
JPS571074B2 (en) 1982-01-09

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