JPS52152128A - Minute signal detection circuit - Google Patents

Minute signal detection circuit

Info

Publication number
JPS52152128A
JPS52152128A JP6944176A JP6944176A JPS52152128A JP S52152128 A JPS52152128 A JP S52152128A JP 6944176 A JP6944176 A JP 6944176A JP 6944176 A JP6944176 A JP 6944176A JP S52152128 A JPS52152128 A JP S52152128A
Authority
JP
Japan
Prior art keywords
signal detection
detection circuit
minute signal
level
misic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6944176A
Other languages
Japanese (ja)
Inventor
Nobuaki Ieda
Takeshi Takeya
Takao Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6944176A priority Critical patent/JPS52152128A/en
Publication of JPS52152128A publication Critical patent/JPS52152128A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:The current absorbing circuit having two-level absorption current level is provided, thereby realizing highly sensitive minute signal detection circuit which realizes the high density of a MISIC memory and the reduction of its price.
JP6944176A 1976-06-14 1976-06-14 Minute signal detection circuit Pending JPS52152128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6944176A JPS52152128A (en) 1976-06-14 1976-06-14 Minute signal detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6944176A JPS52152128A (en) 1976-06-14 1976-06-14 Minute signal detection circuit

Publications (1)

Publication Number Publication Date
JPS52152128A true JPS52152128A (en) 1977-12-17

Family

ID=13402717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6944176A Pending JPS52152128A (en) 1976-06-14 1976-06-14 Minute signal detection circuit

Country Status (1)

Country Link
JP (1) JPS52152128A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384636A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Sense amplifier circuit
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
JPS63119095A (en) * 1984-07-26 1988-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Sensing amplifier for semiconductor memory
JPH03198285A (en) * 1989-12-26 1991-08-29 Sharp Corp Read circuit for semiconductor storage device
JPH03222189A (en) * 1990-01-26 1991-10-01 Sanyo Electric Co Ltd Semiconductor memory device
JPH03222187A (en) * 1990-01-26 1991-10-01 Sanyo Electric Co Ltd Semiconductor memory device
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
USRE34026E (en) * 1984-08-02 1992-08-11 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
JPH0547178A (en) * 1991-08-14 1993-02-26 Samsung Electron Co Ltd Semiconductor memory device equipped with high-speed sensing device
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
US7577045B2 (en) 2006-07-07 2009-08-18 Elpida Memory, Inc. Semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119943A (en) * 1974-07-23 1976-02-17 Ibm
JPS52102642A (en) * 1976-02-24 1977-08-29 Toshiba Corp Dynamic memory device
JPS52147934A (en) * 1976-05-03 1977-12-08 Texas Instruments Inc Memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119943A (en) * 1974-07-23 1976-02-17 Ibm
JPS52102642A (en) * 1976-02-24 1977-08-29 Toshiba Corp Dynamic memory device
JPS52147934A (en) * 1976-05-03 1977-12-08 Texas Instruments Inc Memory

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384636A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Sense amplifier circuit
JPS63119095A (en) * 1984-07-26 1988-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Sensing amplifier for semiconductor memory
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
USRE34026E (en) * 1984-08-02 1992-08-11 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
JPH03198285A (en) * 1989-12-26 1991-08-29 Sharp Corp Read circuit for semiconductor storage device
JPH03222189A (en) * 1990-01-26 1991-10-01 Sanyo Electric Co Ltd Semiconductor memory device
JPH03222187A (en) * 1990-01-26 1991-10-01 Sanyo Electric Co Ltd Semiconductor memory device
JPH0547178A (en) * 1991-08-14 1993-02-26 Samsung Electron Co Ltd Semiconductor memory device equipped with high-speed sensing device
US7577045B2 (en) 2006-07-07 2009-08-18 Elpida Memory, Inc. Semiconductor memory device

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