JPS521877B2 - - Google Patents

Info

Publication number
JPS521877B2
JPS521877B2 JP47096007A JP9600772A JPS521877B2 JP S521877 B2 JPS521877 B2 JP S521877B2 JP 47096007 A JP47096007 A JP 47096007A JP 9600772 A JP9600772 A JP 9600772A JP S521877 B2 JPS521877 B2 JP S521877B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47096007A
Other languages
Japanese (ja)
Other versions
JPS4953386A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47096007A priority Critical patent/JPS521877B2/ja
Priority to GB4475173A priority patent/GB1429696A/en
Priority to CA181,779A priority patent/CA1004780A/en
Priority to FR7334414A priority patent/FR2200636B1/fr
Priority to NLAANVRAGE7313221,A priority patent/NL184814C/xx
Priority to IT52725/73A priority patent/IT994322B/it
Priority to DE19732348262 priority patent/DE2348262A1/de
Publication of JPS4953386A publication Critical patent/JPS4953386A/ja
Publication of JPS521877B2 publication Critical patent/JPS521877B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP47096007A 1972-09-25 1972-09-25 Expired JPS521877B2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (fr) 1972-09-25 1972-09-25
GB4475173A GB1429696A (fr) 1972-09-25 1973-09-24
CA181,779A CA1004780A (en) 1972-09-25 1973-09-24 Semiconductor integrated circuit mis structure
FR7334414A FR2200636B1 (fr) 1972-09-25 1973-09-25
NLAANVRAGE7313221,A NL184814C (nl) 1972-09-25 1973-09-25 Geintegreerde halfgeleiderschakeling.
IT52725/73A IT994322B (it) 1972-09-25 1973-09-25 Circuito integrato a semiconduttore
DE19732348262 DE2348262A1 (de) 1972-09-25 1973-09-25 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (fr) 1972-09-25 1972-09-25

Publications (2)

Publication Number Publication Date
JPS4953386A JPS4953386A (fr) 1974-05-23
JPS521877B2 true JPS521877B2 (fr) 1977-01-18

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47096007A Expired JPS521877B2 (fr) 1972-09-25 1972-09-25

Country Status (7)

Country Link
JP (1) JPS521877B2 (fr)
CA (1) CA1004780A (fr)
DE (1) DE2348262A1 (fr)
FR (1) FR2200636B1 (fr)
GB (1) GB1429696A (fr)
IT (1) IT994322B (fr)
NL (1) NL184814C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539873B2 (de) * 1966-10-18 1971-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Transistor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (fr) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Also Published As

Publication number Publication date
IT994322B (it) 1975-10-20
GB1429696A (fr) 1976-03-24
FR2200636B1 (fr) 1978-06-30
FR2200636A1 (fr) 1974-04-19
CA1004780A (en) 1977-02-01
DE2348262A1 (de) 1974-04-18
JPS4953386A (fr) 1974-05-23
NL7313221A (fr) 1974-03-27
NL184814C (nl) 1989-11-01
NL184814B (nl) 1989-06-01

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