JPS5221782A - Producing system and unit of semiconductor - Google Patents
Producing system and unit of semiconductorInfo
- Publication number
- JPS5221782A JPS5221782A JP9748475A JP9748475A JPS5221782A JP S5221782 A JPS5221782 A JP S5221782A JP 9748475 A JP9748475 A JP 9748475A JP 9748475 A JP9748475 A JP 9748475A JP S5221782 A JPS5221782 A JP S5221782A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- unit
- producing system
- fointly
- crack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To be free from stage cutting of round body and crack by heat treatment of SiO2 film including the appointed volume of P2O5 and B2O5 fointly used.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9748475A JPS5221782A (en) | 1975-08-13 | 1975-08-13 | Producing system and unit of semiconductor |
| GB32879/76A GB1504484A (en) | 1975-08-13 | 1976-08-06 | Semiconductor device and a method for manufacturing the same |
| DE2636383A DE2636383C2 (en) | 1975-08-13 | 1976-08-12 | Method for manufacturing a MOS field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9748475A JPS5221782A (en) | 1975-08-13 | 1975-08-13 | Producing system and unit of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5221782A true JPS5221782A (en) | 1977-02-18 |
Family
ID=14193535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9748475A Pending JPS5221782A (en) | 1975-08-13 | 1975-08-13 | Producing system and unit of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5221782A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321612A (en) * | 1979-01-24 | 1982-03-23 | Tokyo Shibaura Denki Kabushiki Kaisha | Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation |
| JPS59105338A (en) * | 1982-12-08 | 1984-06-18 | Nec Corp | Manufacture of semiconductor device |
| US4472730A (en) * | 1980-12-29 | 1984-09-18 | Nippon Electric Co., Ltd. | Semiconductor device having an improved moisture resistance |
| JPS59222945A (en) * | 1983-06-02 | 1984-12-14 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US4551743A (en) * | 1980-08-29 | 1985-11-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit with isolation region made of dielectric material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50114172A (en) * | 1974-02-15 | 1975-09-06 |
-
1975
- 1975-08-13 JP JP9748475A patent/JPS5221782A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50114172A (en) * | 1974-02-15 | 1975-09-06 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321612A (en) * | 1979-01-24 | 1982-03-23 | Tokyo Shibaura Denki Kabushiki Kaisha | Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation |
| US4551743A (en) * | 1980-08-29 | 1985-11-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit with isolation region made of dielectric material |
| US4472730A (en) * | 1980-12-29 | 1984-09-18 | Nippon Electric Co., Ltd. | Semiconductor device having an improved moisture resistance |
| JPS59105338A (en) * | 1982-12-08 | 1984-06-18 | Nec Corp | Manufacture of semiconductor device |
| JPS59222945A (en) * | 1983-06-02 | 1984-12-14 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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