JPS5221782A - Producing system and unit of semiconductor - Google Patents

Producing system and unit of semiconductor

Info

Publication number
JPS5221782A
JPS5221782A JP9748475A JP9748475A JPS5221782A JP S5221782 A JPS5221782 A JP S5221782A JP 9748475 A JP9748475 A JP 9748475A JP 9748475 A JP9748475 A JP 9748475A JP S5221782 A JPS5221782 A JP S5221782A
Authority
JP
Japan
Prior art keywords
semiconductor
unit
producing system
fointly
crack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9748475A
Other languages
Japanese (ja)
Inventor
Teruo Yoneyama
Yasuo Iizuka
Hiroshi Nakasone
Noboru Okuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9748475A priority Critical patent/JPS5221782A/en
Priority to GB32879/76A priority patent/GB1504484A/en
Priority to DE2636383A priority patent/DE2636383C2/en
Publication of JPS5221782A publication Critical patent/JPS5221782A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To be free from stage cutting of round body and crack by heat treatment of SiO2 film including the appointed volume of P2O5 and B2O5 fointly used.
COPYRIGHT: (C)1977,JPO&Japio
JP9748475A 1975-08-13 1975-08-13 Producing system and unit of semiconductor Pending JPS5221782A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9748475A JPS5221782A (en) 1975-08-13 1975-08-13 Producing system and unit of semiconductor
GB32879/76A GB1504484A (en) 1975-08-13 1976-08-06 Semiconductor device and a method for manufacturing the same
DE2636383A DE2636383C2 (en) 1975-08-13 1976-08-12 Method for manufacturing a MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9748475A JPS5221782A (en) 1975-08-13 1975-08-13 Producing system and unit of semiconductor

Publications (1)

Publication Number Publication Date
JPS5221782A true JPS5221782A (en) 1977-02-18

Family

ID=14193535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9748475A Pending JPS5221782A (en) 1975-08-13 1975-08-13 Producing system and unit of semiconductor

Country Status (1)

Country Link
JP (1) JPS5221782A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321612A (en) * 1979-01-24 1982-03-23 Tokyo Shibaura Denki Kabushiki Kaisha Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation
JPS59105338A (en) * 1982-12-08 1984-06-18 Nec Corp Manufacture of semiconductor device
US4472730A (en) * 1980-12-29 1984-09-18 Nippon Electric Co., Ltd. Semiconductor device having an improved moisture resistance
JPS59222945A (en) * 1983-06-02 1984-12-14 Matsushita Electronics Corp Manufacture of semiconductor device
US4551743A (en) * 1980-08-29 1985-11-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit with isolation region made of dielectric material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114172A (en) * 1974-02-15 1975-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114172A (en) * 1974-02-15 1975-09-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321612A (en) * 1979-01-24 1982-03-23 Tokyo Shibaura Denki Kabushiki Kaisha Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation
US4551743A (en) * 1980-08-29 1985-11-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit with isolation region made of dielectric material
US4472730A (en) * 1980-12-29 1984-09-18 Nippon Electric Co., Ltd. Semiconductor device having an improved moisture resistance
JPS59105338A (en) * 1982-12-08 1984-06-18 Nec Corp Manufacture of semiconductor device
JPS59222945A (en) * 1983-06-02 1984-12-14 Matsushita Electronics Corp Manufacture of semiconductor device

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