JPS5228634B2 - - Google Patents

Info

Publication number: JPS5228634B2
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP581973A

Other languages

Japanese (ja)

Other versions

JPS504977A (en

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-01-10

Filing date

1973-01-10

Publication date

1977-07-27

1973-01-10 Application filed filed Critical

1975-01-20 Publication of JPS504977A publication Critical patent/JPS504977A/ja

1977-07-27 Publication of JPS5228634B2 publication Critical patent/JPS5228634B2/ja

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3221—Arsenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3222—Antimonides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
- H10P14/3231—Selenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3422—Antimonides

Landscapes

Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Led Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Bipolar Transistors (AREA)
Light Receiving Elements (AREA)
Recrystallisation Techniques (AREA)

JP581973A 1972-01-10 1973-01-10 Expired JPS5228634B2 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US21637672A	1972-01-10	1972-01-10

Publications (2)

Publication Number	Publication Date
JPS504977A JPS504977A (en)	1975-01-20
JPS5228634B2 true JPS5228634B2 (en)	1977-07-27

Family

ID=22806816

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP581973A Expired JPS5228634B2 (en)	1972-01-10	1973-01-10

Country Status (10)

Country	Link
JP (1)	JPS5228634B2 (en)
AU (1)	AU466927B2 (en)
BE (1)	BE793800A (en)
CA (1)	CA973976A (en)
DE (1)	DE2300921A1 (en)
FR (1)	FR2167831B1 (en)
GB (1)	GB1417484A (en)
IT (1)	IT978097B (en)
NL (1)	NL7300350A (en)
SE (1)	SE387473B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5264272A (en) *	1975-11-22	1977-05-27	Fujitsu Ltd	Semiconductor crystal
CA1256590A (en) *	1985-03-15	1989-06-27	Yuichi Matsui	Compound semiconductor device with layers having different lattice constants
GB2215514A (en) *	1988-03-04	1989-09-20	Plessey Co Plc	Terminating dislocations in semiconductor epitaxial layers
JP2588280B2 (en) *	1989-07-10	1997-03-05	シャープ株式会社	Compound semiconductor light emitting device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3493811A (en) *	1966-06-22	1970-02-03	Hewlett Packard Co	Epitaxial semiconductor material on dissimilar substrate and method for producing the same

0
- BE BE793800D patent/BE793800A/en unknown
1973
- 1973-01-09 DE DE2300921A patent/DE2300921A1/en active Pending
- 1973-01-09 GB GB110773A patent/GB1417484A/en not_active Expired
- 1973-01-09 FR FR7300559A patent/FR2167831B1/fr not_active Expired
- 1973-01-09 CA CA160,857A patent/CA973976A/en not_active Expired
- 1973-01-10 AU AU50942/73A patent/AU466927B2/en not_active Expired
- 1973-01-10 NL NL7300350A patent/NL7300350A/xx unknown
- 1973-01-10 JP JP581973A patent/JPS5228634B2/ja not_active Expired
- 1973-01-10 IT IT19137/73A patent/IT978097B/en active
- 1973-01-10 SE SE7300295A patent/SE387473B/en unknown

Also Published As

Publication number	Publication date
BE793800A (en)	1973-05-02
GB1417484A (en)	1975-12-10
CA973976A (en)	1975-09-02
IT978097B (en)	1974-09-20
NL7300350A (en)	1973-07-12
AU5094273A (en)	1974-07-11
AU466927B2 (en)	1975-11-13
DE2300921A1 (en)	1973-07-19
JPS504977A (en)	1975-01-20
FR2167831A1 (en)	1973-08-24
SE387473B (en)	1976-09-06
FR2167831B1 (en)	1977-12-30

Publication	Publication Date	Title
JPS4970305A (en)	1974-07-08
DK134443C (en)	1977-04-04
JPS4887488A (en)	1973-11-17
FR2167831B1 (en)	1977-12-30
JPS5234258Y2 (en)	1977-08-05
JPS5228572B2 (en)	1977-07-27
JPS4917730U (en)	1974-02-14
JPS525939Y2 (en)	1977-02-08
JPS556162B2 (en)	1980-02-14
JPS4989662A (en)	1974-08-27
JPS4892895A (en)	1973-12-01
JPS497995U (en)	1974-01-23
JPS5152866Y2 (en)	1976-12-17
JPS5239859Y2 (en)	1977-09-09
JPS4982206U (en)	1974-07-17
JPS4979139U (en)	1974-07-09
JPS48109796U (en)	1973-12-18
JPS4917680U (en)	1974-02-14
JPS4960627U (en)	1974-05-28
CH581098A5 (en)	1976-10-29
CH581101A5 (en)	1976-10-29
CH579003A5 (en)	1976-08-31
CH579559A5 (en)	1976-09-15
SE7101359L (en)	1972-08-07
CH578830A5 (en)	1976-08-31