JPS5234683A - Mos-type transistor circuit - Google Patents

Mos-type transistor circuit

Info

Publication number: JPS5234683A
Authority: JP; Japan
Prior art keywords: mos; type transistor; transistor circuit; circuit; materialize
Prior art date: 1975-08-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP50100441A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5634095B2 (2

Inventor

Shigeru Arita

Masao Kayahara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-08-18

Filing date

1975-08-18

Publication date

1977-03-16

1975-08-18 Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp

1975-08-18 Priority to JP50100441A priority Critical patent/JPS5234683A/ja

1977-03-16 Publication of JPS5234683A publication Critical patent/JPS5234683A/ja

1981-08-07 Publication of JPS5634095B2 publication Critical patent/JPS5634095B2/ja

Status Granted legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

Semiconductor Integrated Circuits (AREA)
Electronic Switches (AREA)

JP50100441A 1975-08-18 1975-08-18 Mos-type transistor circuit Granted JPS5234683A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP50100441A JPS5234683A (en)	1975-08-18	1975-08-18	Mos-type transistor circuit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP50100441A JPS5234683A (en)	1975-08-18	1975-08-18	Mos-type transistor circuit

Publications (2)

Publication Number	Publication Date
JPS5234683A true JPS5234683A (en)	1977-03-16
JPS5634095B2 JPS5634095B2 (2)	1981-08-07

Family

ID=14274010

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP50100441A Granted JPS5234683A (en)	1975-08-18	1975-08-18	Mos-type transistor circuit

Country Status (1)

Country	Link
JP (1)	JPS5234683A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7453289B2 (en)	2002-10-21	2008-11-18	Advantest Corporation	Transmission circuit, CMOS semiconductor device, and design method thereof

1975
- 1975-08-18 JP JP50100441A patent/JPS5234683A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7453289B2 (en)	2002-10-21	2008-11-18	Advantest Corporation	Transmission circuit, CMOS semiconductor device, and design method thereof

Also Published As

Publication number	Publication date
JPS5634095B2 (2)	1981-08-07

Similar Documents

Publication	Publication Date	Title
JPS5238852A (en)	1977-03-25	Level shift circuit
JPS51140642A (en)	1976-12-03	Driving circuit
JPS5239351A (en)	1977-03-26	Initializing pulse generating circuit
NL7603827A (nl)	1976-10-18	Geintegreerde schakeling.
JPS5234683A (en)	1977-03-16	Mos-type transistor circuit
JPS5275987A (en)	1977-06-25	Gate protecting device
JPS51123080A (en)	1976-10-27	Variable capacitance element
NL7614383A (nl)	1977-07-01	Geintegreerde schakeling met komplementaire bi- polaire transistoren.
NL7614428A (nl)	1977-07-01	Geintegreerde schakeling met komplementaire bipolaire transistoren.
JPS52357A (en)	1977-01-05	Low-voltage reference voltage source circuit
JPS52149934A (en)	1977-12-13	Cyclic code arithmetic circuit
JPS5276867A (en)	1977-06-28	Signal holding circuit
JPS5229139A (en)	1977-03-04	Variable limitter circuit
JPS5270774A (en)	1977-06-13	Semiconductor integrated circuit unit
JPS526036A (en)	1977-01-18	Semiconductor memory circuit
JPS5367335A (en)	1978-06-15	Integrated circuit formation current matching circuit
JPS5226185A (en)	1977-02-26	Semi-conductor unit
JPS526458A (en)	1977-01-18	Integrated semi-conductor logicalcircuit
JPS51111366A (en)	1976-10-01	Effective value transformation apparatus
JPS5277568A (en)	1977-06-30	Drive circuit
JPS51131256A (en)	1976-11-15	Diode matrix circuit
JPS5233449A (en)	1977-03-14	Trap unit
JPS51118971A (en)	1976-10-19	Semiconductor device
JPS5211701A (en)	1977-01-28	Tuning voltage preset circuit
JPS51128577A (en)	1976-11-09	Pulse width compare circuit