JPS5236947A - Regenerative circuit for charge transfer device - Google Patents
Regenerative circuit for charge transfer deviceInfo
- Publication number
- JPS5236947A JPS5236947A JP51103522A JP10352276A JPS5236947A JP S5236947 A JPS5236947 A JP S5236947A JP 51103522 A JP51103522 A JP 51103522A JP 10352276 A JP10352276 A JP 10352276A JP S5236947 A JPS5236947 A JP S5236947A
- Authority
- JP
- Japan
- Prior art keywords
- transfer device
- charge transfer
- regenerative circuit
- regenerative
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/456—Structures for regeneration, refreshing or leakage compensation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752541662 DE2541662A1 (de) | 1975-09-18 | 1975-09-18 | Regenerierschaltung fuer ladungsverschiebeanordnungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5236947A true JPS5236947A (en) | 1977-03-22 |
Family
ID=5956815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51103522A Pending JPS5236947A (en) | 1975-09-18 | 1976-08-30 | Regenerative circuit for charge transfer device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4121117A (ja) |
| JP (1) | JPS5236947A (ja) |
| BE (1) | BE846334A (ja) |
| DE (1) | DE2541662A1 (ja) |
| FR (1) | FR2325153A1 (ja) |
| GB (1) | GB1566292A (ja) |
| IT (1) | IT1067942B (ja) |
| NL (1) | NL7609631A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2392392A1 (fr) * | 1977-05-27 | 1978-12-22 | Commissariat Energie Atomique | Circuit de mesure de charge stockee dans un d.t.c. |
| US4812668A (en) * | 1986-04-17 | 1989-03-14 | Honeywell Inc. | Multiplexer elements for photovoltaic detectors |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3623132A (en) * | 1970-12-14 | 1971-11-23 | North American Rockwell | Charge sensing circuit |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| JPS5214944B1 (ja) * | 1971-06-04 | 1977-04-25 | ||
| US3775693A (en) * | 1971-11-29 | 1973-11-27 | Moskek Co | Mosfet logic inverter for integrated circuits |
| US3831041A (en) * | 1973-05-03 | 1974-08-20 | Bell Telephone Labor Inc | Compensating circuit for semiconductive apparatus |
| US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
| US3876989A (en) * | 1973-06-18 | 1975-04-08 | Ibm | Ccd optical sensor storage device having continuous light exposure compensation |
| US3889245A (en) * | 1973-07-02 | 1975-06-10 | Texas Instruments Inc | Metal-insulator-semiconductor compatible charge transfer device memory system |
| US3937985A (en) * | 1974-06-05 | 1976-02-10 | Bell Telephone Laboratories, Incorporated | Apparatus and method for regenerating charge |
| US3891977A (en) * | 1974-07-15 | 1975-06-24 | Fairchild Camera Instr Co | Charge coupled memory device |
| US3955101A (en) * | 1974-07-29 | 1976-05-04 | Fairchild Camera And Instrument Coporation | Dynamic reference voltage generator |
| US3944990A (en) * | 1974-12-06 | 1976-03-16 | Intel Corporation | Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers |
| US3988617A (en) * | 1974-12-23 | 1976-10-26 | International Business Machines Corporation | Field effect transistor bias circuit |
| US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
-
1975
- 1975-09-18 DE DE19752541662 patent/DE2541662A1/de not_active Withdrawn
-
1976
- 1976-08-30 JP JP51103522A patent/JPS5236947A/ja active Pending
- 1976-08-30 NL NL7609631A patent/NL7609631A/xx not_active Application Discontinuation
- 1976-08-31 IT IT26694/76A patent/IT1067942B/it active
- 1976-09-02 US US05/720,050 patent/US4121117A/en not_active Expired - Lifetime
- 1976-09-03 FR FR7626622A patent/FR2325153A1/fr active Granted
- 1976-09-13 GB GB37802/76A patent/GB1566292A/en not_active Expired
- 1976-09-17 BE BE170730A patent/BE846334A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2325153A1 (fr) | 1977-04-15 |
| IT1067942B (it) | 1985-03-21 |
| FR2325153B1 (ja) | 1978-11-03 |
| DE2541662A1 (de) | 1977-03-24 |
| GB1566292A (en) | 1980-04-30 |
| NL7609631A (nl) | 1977-03-22 |
| BE846334A (fr) | 1977-01-17 |
| US4121117A (en) | 1978-10-17 |
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