JPS5236947A - Regenerative circuit for charge transfer device - Google Patents

Regenerative circuit for charge transfer device

Info

Publication number
JPS5236947A
JPS5236947A JP51103522A JP10352276A JPS5236947A JP S5236947 A JPS5236947 A JP S5236947A JP 51103522 A JP51103522 A JP 51103522A JP 10352276 A JP10352276 A JP 10352276A JP S5236947 A JPS5236947 A JP S5236947A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
regenerative circuit
regenerative
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51103522A
Other languages
English (en)
Inventor
Hofuman Kuruto
Uotoruba Gotsutofuriito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5236947A publication Critical patent/JPS5236947A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456Structures for regeneration, refreshing or leakage compensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP51103522A 1975-09-18 1976-08-30 Regenerative circuit for charge transfer device Pending JPS5236947A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752541662 DE2541662A1 (de) 1975-09-18 1975-09-18 Regenerierschaltung fuer ladungsverschiebeanordnungen

Publications (1)

Publication Number Publication Date
JPS5236947A true JPS5236947A (en) 1977-03-22

Family

ID=5956815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51103522A Pending JPS5236947A (en) 1975-09-18 1976-08-30 Regenerative circuit for charge transfer device

Country Status (8)

Country Link
US (1) US4121117A (ja)
JP (1) JPS5236947A (ja)
BE (1) BE846334A (ja)
DE (1) DE2541662A1 (ja)
FR (1) FR2325153A1 (ja)
GB (1) GB1566292A (ja)
IT (1) IT1067942B (ja)
NL (1) NL7609631A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4812668A (en) * 1986-04-17 1989-03-14 Honeywell Inc. Multiplexer elements for photovoltaic detectors

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
JPS5214944B1 (ja) * 1971-06-04 1977-04-25
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
US3831041A (en) * 1973-05-03 1974-08-20 Bell Telephone Labor Inc Compensating circuit for semiconductive apparatus
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3889245A (en) * 1973-07-02 1975-06-10 Texas Instruments Inc Metal-insulator-semiconductor compatible charge transfer device memory system
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device
US3955101A (en) * 1974-07-29 1976-05-04 Fairchild Camera And Instrument Coporation Dynamic reference voltage generator
US3944990A (en) * 1974-12-06 1976-03-16 Intel Corporation Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
US3988617A (en) * 1974-12-23 1976-10-26 International Business Machines Corporation Field effect transistor bias circuit
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices

Also Published As

Publication number Publication date
FR2325153A1 (fr) 1977-04-15
IT1067942B (it) 1985-03-21
FR2325153B1 (ja) 1978-11-03
DE2541662A1 (de) 1977-03-24
GB1566292A (en) 1980-04-30
NL7609631A (nl) 1977-03-22
BE846334A (fr) 1977-01-17
US4121117A (en) 1978-10-17

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