JPS5243376A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: JPS5243376A
Authority: JP; Japan
Prior art keywords: semiconductor device; high concentration; layer; duffusion; latch
Prior art date: 1975-10-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP50118637A

Other languages

English (en)

Inventor

Toru Kuwabara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-10-01

Filing date

1975-10-01

Publication date

1977-04-05

1975-10-01 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1975-10-01 Priority to JP50118637A priority Critical patent/JPS5243376A/ja

1977-04-05 Publication of JPS5243376A publication Critical patent/JPS5243376A/ja

Status Pending legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

JP50118637A 1975-10-01 1975-10-01 Semiconductor device Pending JPS5243376A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP50118637A JPS5243376A (en)	1975-10-01	1975-10-01	Semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP50118637A JPS5243376A (en)	1975-10-01	1975-10-01	Semiconductor device

Publications (1)

Publication Number	Publication Date
JPS5243376A true JPS5243376A (en)	1977-04-05

Family

ID=14741454

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP50118637A Pending JPS5243376A (en)	1975-10-01	1975-10-01	Semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS5243376A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57157557A (en) *	1981-03-23	1982-09-29	Fujitsu Ltd	Complementary mis integrated circuit
EP0767497A1 (en) *	1995-10-04	1997-04-09	Nec Corporation	A semiconductor device having pull-up or pull-down resistance

1975
- 1975-10-01 JP JP50118637A patent/JPS5243376A/ja active Pending

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57157557A (en) *	1981-03-23	1982-09-29	Fujitsu Ltd	Complementary mis integrated circuit
EP0767497A1 (en) *	1995-10-04	1997-04-09	Nec Corporation	A semiconductor device having pull-up or pull-down resistance
US5760447A (en) *	1995-10-04	1998-06-02	Nec Corporation	Semiconductor device having pull-up or pull-down resistance

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