JPS5246735A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS5246735A JPS5246735A JP50121829A JP12182975A JPS5246735A JP S5246735 A JPS5246735 A JP S5246735A JP 50121829 A JP50121829 A JP 50121829A JP 12182975 A JP12182975 A JP 12182975A JP S5246735 A JPS5246735 A JP S5246735A
- Authority
- JP
- Japan
- Prior art keywords
- storage device
- semiconductor storage
- circuit
- constinuting
- structrue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:One of the transistors forming ratch circuit is made into collector structrue. At the same time, each transistor constinuting memory circuit is electrically isolated, and selection signal is applied. Thus, the control circuit of ILL element can be simplified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50121829A JPS5246735A (en) | 1975-10-11 | 1975-10-11 | Semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50121829A JPS5246735A (en) | 1975-10-11 | 1975-10-11 | Semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5246735A true JPS5246735A (en) | 1977-04-13 |
Family
ID=14820949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50121829A Pending JPS5246735A (en) | 1975-10-11 | 1975-10-11 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5246735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1980000761A1 (en) * | 1978-10-03 | 1980-04-17 | Tokyo Shibaura Electric Co | Semiconductor memory device |
-
1975
- 1975-10-11 JP JP50121829A patent/JPS5246735A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1980000761A1 (en) * | 1978-10-03 | 1980-04-17 | Tokyo Shibaura Electric Co | Semiconductor memory device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL7500550A (en) | SEMICONDUCTOR MEMORY DEVICE. | |
| NL7614537A (en) | SEMICONDUCTOR MEMORY DEVICE. | |
| NL159820B (en) | INTEGRATED SEMICONDUCTOR SWITCHING OF FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE. | |
| CA981765A (en) | Transistor amplifier circuits with stabilized low current biasing | |
| CA984969A (en) | Circuit for improving operation of semiconductor memory | |
| NL7607984A (en) | SEMICONDUCTOR MEMORY. | |
| JPS5357771A (en) | Non-volatile memory transistor | |
| JPS51147224A (en) | Semiconductor memory | |
| AU3425671A (en) | Transistor memory circuit | |
| JPS51150284A (en) | Semiconductor unvolatile memory unit | |
| NL177636C (en) | INTEGRATED SEMICONDUCTOR MEMORY CIRCUIT WITH SCHOTTKY DIODS. | |
| JPS5263684A (en) | Non-volatile semiconductor memory device | |
| GB1543971A (en) | Dynamic type semiconductor memory device | |
| JPS5228277A (en) | Non-voltatile semiconductor memory device | |
| CA1000404A (en) | Semiconductor memory device | |
| CA982263A (en) | Mos memory driver circuit | |
| JPS525225A (en) | Semi-conductor memory | |
| JPS526036A (en) | Semiconductor memory circuit | |
| AU479621B2 (en) | Transistor amplifier circuits with stabilized low current biasing | |
| DE3065534D1 (en) | Semiconductor memory device with multi-emitter transistor cells | |
| JPS5318374A (en) | Transistor base driving circuit | |
| JPS5236476A (en) | Non-volatile semiconductor memory | |
| JPS5236475A (en) | Non-volatile semiconductor memory | |
| JPS5387674A (en) | Semiconductor memory device | |
| JPS53138684A (en) | Semiconductor memory device |