JPS5246779A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5246779A
JPS5246779A JP50121779A JP12177975A JPS5246779A JP S5246779 A JPS5246779 A JP S5246779A JP 50121779 A JP50121779 A JP 50121779A JP 12177975 A JP12177975 A JP 12177975A JP S5246779 A JPS5246779 A JP S5246779A
Authority
JP
Japan
Prior art keywords
thyristor
gate turn
current
reducing
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50121779A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50121779A priority Critical patent/JPS5246779A/en
Publication of JPS5246779A publication Critical patent/JPS5246779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To change the thickness of a small number of cathode regions only, thereby reducing latching current and holding current without reducing maximum control current and turn-off gain.
JP50121779A 1975-10-11 1975-10-11 Gate turn-off thyristor Pending JPS5246779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50121779A JPS5246779A (en) 1975-10-11 1975-10-11 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50121779A JPS5246779A (en) 1975-10-11 1975-10-11 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5246779A true JPS5246779A (en) 1977-04-13

Family

ID=14819668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50121779A Pending JPS5246779A (en) 1975-10-11 1975-10-11 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5246779A (en)

Similar Documents

Publication Publication Date Title
JPS5235586A (en) Semiconductor device
JPS51142983A (en) Scr
FR2299727A1 (en) THYRISTOR WITH IMPROVED SWITCHING CHARACTERISTICS
JPS51150284A (en) Semiconductor unvolatile memory unit
SE7610074L (en) SEMICONDUCTOR SWITCH
JPS5252377A (en) Gate turn-off thyristor
JPS5269281A (en) Gate turn-off thyristor
JPS51122382A (en) Semiconductor device
JPS5362974A (en) Gate control circuit of gate turn off thyristor
JPS51145282A (en) Thyrlstor
JPS5310285A (en) Reverse conducting thyristor
JPS5272188A (en) Gate turn-off thyristor
JPS5375430A (en) Inverse conduction gto rectifler
JPS51123573A (en) Semiconductor switching device
JPS5211778A (en) Semiconductor controlled rectifier
JPS53127279A (en) Semiconductor device
JPS5236963A (en) Control device for thyristor
JPS5362484A (en) Thyristor
JPS5214339A (en) Voltage controlled type multivibrator
JPS5431286A (en) Thyristor
JPS5383473A (en) Thyristor
JPS51139785A (en) Semiconductor device
JPS5231691A (en) Semiconductor luminous device
JPS5235969A (en) Switching circuit
JPS51112161A (en) Switching circuit