JPS524746A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS524746A
JPS524746A JP50081179A JP8117975A JPS524746A JP S524746 A JPS524746 A JP S524746A JP 50081179 A JP50081179 A JP 50081179A JP 8117975 A JP8117975 A JP 8117975A JP S524746 A JPS524746 A JP S524746A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
substancially
mosfet
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50081179A
Other languages
Japanese (ja)
Inventor
Junichi Mogi
Kiyoshi Miyasaka
Fumio Baba
Seiji Emoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50081179A priority Critical patent/JPS524746A/en
Publication of JPS524746A publication Critical patent/JPS524746A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To make a memory cell with a MOSFET by use of DA-AD converter and to store multivalue information so as to increase bit density substancially.
JP50081179A 1975-06-30 1975-06-30 Semiconductor memory device Pending JPS524746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50081179A JPS524746A (en) 1975-06-30 1975-06-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50081179A JPS524746A (en) 1975-06-30 1975-06-30 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS524746A true JPS524746A (en) 1977-01-14

Family

ID=13739230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50081179A Pending JPS524746A (en) 1975-06-30 1975-06-30 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS524746A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163996A (en) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> Information memory
JPS6342097A (en) * 1986-08-07 1988-02-23 Yukio Yasuda Multi-level logic storage circuit
EP1416496A1 (en) * 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062333A (en) * 1973-09-28 1975-05-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062333A (en) * 1973-09-28 1975-05-28

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163996A (en) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> Information memory
JPS6342097A (en) * 1986-08-07 1988-02-23 Yukio Yasuda Multi-level logic storage circuit
EP1416496A1 (en) * 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device
US6801445B2 (en) 2002-11-04 2004-10-05 Dialog Semiconductor Gmbh Multiple level RAM device

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