JPS5249767A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5249767A
JPS5249767A JP50125316A JP12531675A JPS5249767A JP S5249767 A JPS5249767 A JP S5249767A JP 50125316 A JP50125316 A JP 50125316A JP 12531675 A JP12531675 A JP 12531675A JP S5249767 A JPS5249767 A JP S5249767A
Authority
JP
Japan
Prior art keywords
electrodes
semiconductor device
flatterned
formaing
once
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50125316A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50125316A priority Critical patent/JPS5249767A/en
Publication of JPS5249767A publication Critical patent/JPS5249767A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01955—Changing the shapes of bond pads by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form flatterned electrodes, by once formaing electrodes in electrode connecting part and extra hole alone then forming fresh electrodes later.
COPYRIGHT: (C)1977,JPO&Japio
JP50125316A 1975-10-20 1975-10-20 Semiconductor device Pending JPS5249767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50125316A JPS5249767A (en) 1975-10-20 1975-10-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50125316A JPS5249767A (en) 1975-10-20 1975-10-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5249767A true JPS5249767A (en) 1977-04-21

Family

ID=14907078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50125316A Pending JPS5249767A (en) 1975-10-20 1975-10-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5249767A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145340A (en) * 1981-03-05 1982-09-08 Toshiba Corp Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS58159757U (en) * 1982-04-20 1983-10-25 三洋電機株式会社 semiconductor equipment
JPS62235758A (en) * 1986-03-21 1987-10-15 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Formation of conducting mutual connection
JPH02308539A (en) * 1989-05-23 1990-12-21 Hitachi Ltd Construction of electrode of semiconductor device
US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145340A (en) * 1981-03-05 1982-09-08 Toshiba Corp Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS58159757U (en) * 1982-04-20 1983-10-25 三洋電機株式会社 semiconductor equipment
JPS62235758A (en) * 1986-03-21 1987-10-15 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Formation of conducting mutual connection
US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
US5744377A (en) * 1987-10-08 1998-04-28 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
JPH02308539A (en) * 1989-05-23 1990-12-21 Hitachi Ltd Construction of electrode of semiconductor device

Similar Documents

Publication Publication Date Title
JPS51145276A (en) Semiconductor device
JPS5249767A (en) Semiconductor device
JPS522277A (en) Soldering device
JPS51150988A (en) X-ray device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS5417666A (en) Lead frame
JPS5411682A (en) Semiconductor device
JPS5244185A (en) Limiter element
JPS5210032A (en) Construction method of semiconductor memory unit
JPS5228868A (en) Semiconductor device
JPS522170A (en) Electronic parts
JPS52153383A (en) Preparation of semiconductor device
JPS51131964A (en) Filter device
JPS5229561A (en) Welded nut and its manufacturing process
JPS5227280A (en) Method to form pinholes
JPS51129178A (en) Semiconductor
JPS5397765A (en) Production of semiconductor device
JPS52180A (en) Transistor
JPS51115282A (en) Electrode
JPS52156583A (en) Electrode formation method in semiconductor device
JPS51140479A (en) Semiconductor device
JPS51141583A (en) Method for producing an electrode for use semiconductor units
JPS51122374A (en) Plan-type multi-digit indicating device and its process
JPS522739A (en) Development electrode device of electron duplicator
JPS5218179A (en) Production method of semiconductor device