JPS5256844A - Field effect type transistor ultra-high frequency amplifier - Google Patents

Field effect type transistor ultra-high frequency amplifier

Info

Publication number
JPS5256844A
JPS5256844A JP13352575A JP13352575A JPS5256844A JP S5256844 A JPS5256844 A JP S5256844A JP 13352575 A JP13352575 A JP 13352575A JP 13352575 A JP13352575 A JP 13352575A JP S5256844 A JPS5256844 A JP S5256844A
Authority
JP
Japan
Prior art keywords
ultra
high frequency
field effect
type transistor
frequency amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13352575A
Other languages
Japanese (ja)
Inventor
Shigenobu Aihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13352575A priority Critical patent/JPS5256844A/en
Publication of JPS5256844A publication Critical patent/JPS5256844A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:The source terminal of nearly 50OMEGA can be used as an output terminal through grounding drain terminal in order to unify the high-frequency circuit or supply voltage into a single polarity. In this way, the power source circuit can be be simplified.
JP13352575A 1975-11-05 1975-11-05 Field effect type transistor ultra-high frequency amplifier Pending JPS5256844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13352575A JPS5256844A (en) 1975-11-05 1975-11-05 Field effect type transistor ultra-high frequency amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13352575A JPS5256844A (en) 1975-11-05 1975-11-05 Field effect type transistor ultra-high frequency amplifier

Publications (1)

Publication Number Publication Date
JPS5256844A true JPS5256844A (en) 1977-05-10

Family

ID=15106817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13352575A Pending JPS5256844A (en) 1975-11-05 1975-11-05 Field effect type transistor ultra-high frequency amplifier

Country Status (1)

Country Link
JP (1) JPS5256844A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320352A (en) * 1980-01-29 1982-03-16 Ford Aerospace & Communications Corp. Input optimized FET bias circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320352A (en) * 1980-01-29 1982-03-16 Ford Aerospace & Communications Corp. Input optimized FET bias circuit

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