JPS5263088A - Production of gaas light emitting diode - Google Patents

Production of gaas light emitting diode

Info

Publication number
JPS5263088A
JPS5263088A JP13912675A JP13912675A JPS5263088A JP S5263088 A JPS5263088 A JP S5263088A JP 13912675 A JP13912675 A JP 13912675A JP 13912675 A JP13912675 A JP 13912675A JP S5263088 A JPS5263088 A JP S5263088A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
production
gaas
gaas light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13912675A
Other languages
Japanese (ja)
Other versions
JPS584833B2 (en
Inventor
Shoichi Kakimoto
Junji Miyauchi
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50139126A priority Critical patent/JPS584833B2/en
Publication of JPS5263088A publication Critical patent/JPS5263088A/en
Publication of JPS584833B2 publication Critical patent/JPS584833B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a GaAs light emitting diode of high external quantum efficiency by controlling the amount of addition of Zn of a Ptype GaAs diffusion layer and P type Ga As growth layer and the thickness of the P type GaAs diffusion layer.
COPYRIGHT: (C)1977,JPO&Japio
JP50139126A 1975-11-19 1975-11-19 Method for manufacturing G↓aA↓s light emitting diode Expired JPS584833B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139126A JPS584833B2 (en) 1975-11-19 1975-11-19 Method for manufacturing G↓aA↓s light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139126A JPS584833B2 (en) 1975-11-19 1975-11-19 Method for manufacturing G↓aA↓s light emitting diode

Publications (2)

Publication Number Publication Date
JPS5263088A true JPS5263088A (en) 1977-05-25
JPS584833B2 JPS584833B2 (en) 1983-01-27

Family

ID=15238108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139126A Expired JPS584833B2 (en) 1975-11-19 1975-11-19 Method for manufacturing G↓aA↓s light emitting diode

Country Status (1)

Country Link
JP (1) JPS584833B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185921A (en) * 1985-02-13 1986-08-19 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial growth method
JPS61225821A (en) * 1985-03-29 1986-10-07 Fujitsu Ltd Apparatus for liquid phase epitaxial growth
JPS61268023A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185921A (en) * 1985-02-13 1986-08-19 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial growth method
JPS61225821A (en) * 1985-03-29 1986-10-07 Fujitsu Ltd Apparatus for liquid phase epitaxial growth
JPS61268023A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element

Also Published As

Publication number Publication date
JPS584833B2 (en) 1983-01-27

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