JPS5263877A - Pulling up apparatus of single crystal - Google Patents

Pulling up apparatus of single crystal

Info

Publication number
JPS5263877A
JPS5263877A JP14060475A JP14060475A JPS5263877A JP S5263877 A JPS5263877 A JP S5263877A JP 14060475 A JP14060475 A JP 14060475A JP 14060475 A JP14060475 A JP 14060475A JP S5263877 A JPS5263877 A JP S5263877A
Authority
JP
Japan
Prior art keywords
single crystal
pulling
occasion
same time
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14060475A
Other languages
Japanese (ja)
Other versions
JPS5912632B2 (en
Inventor
Koji Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP50140604A priority Critical patent/JPS5912632B2/en
Publication of JPS5263877A publication Critical patent/JPS5263877A/en
Publication of JPS5912632B2 publication Critical patent/JPS5912632B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To attain efficiency improvement of single crystal production,by constituting apparatus in one set, carring out pulling up operation in parallel with slow cooling operation at the same time, on occasion of pulling up single crystal continuously.
COPYRIGHT: (C)1977,JPO&Japio
JP50140604A 1975-11-22 1975-11-22 Tanketshuyounohikiagesouchi Expired JPS5912632B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50140604A JPS5912632B2 (en) 1975-11-22 1975-11-22 Tanketshuyounohikiagesouchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50140604A JPS5912632B2 (en) 1975-11-22 1975-11-22 Tanketshuyounohikiagesouchi

Publications (2)

Publication Number Publication Date
JPS5263877A true JPS5263877A (en) 1977-05-26
JPS5912632B2 JPS5912632B2 (en) 1984-03-24

Family

ID=15272560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50140604A Expired JPS5912632B2 (en) 1975-11-22 1975-11-22 Tanketshuyounohikiagesouchi

Country Status (1)

Country Link
JP (1) JPS5912632B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204896A (en) * 1982-05-04 1983-11-29 コミツサリア・タ・レネルギ−・アトミ−ク Method and device for manufacturing strain-free single crystal comprising crystalline high dielectric compound
JPS60195087A (en) * 1984-03-16 1985-10-03 Hamamatsu Photonics Kk Furnace for growing single crystal
US4645560A (en) * 1983-08-26 1987-02-24 Sumito Electric Industries, Ltd. Liquid encapsulation method for growing single semiconductor crystals
JP2020147459A (en) * 2019-03-12 2020-09-17 住友金属鉱山株式会社 Method for growing lithium niobate single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939221A (en) * 1972-08-23 1974-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939221A (en) * 1972-08-23 1974-04-12

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204896A (en) * 1982-05-04 1983-11-29 コミツサリア・タ・レネルギ−・アトミ−ク Method and device for manufacturing strain-free single crystal comprising crystalline high dielectric compound
US4645560A (en) * 1983-08-26 1987-02-24 Sumito Electric Industries, Ltd. Liquid encapsulation method for growing single semiconductor crystals
JPS60195087A (en) * 1984-03-16 1985-10-03 Hamamatsu Photonics Kk Furnace for growing single crystal
JP2020147459A (en) * 2019-03-12 2020-09-17 住友金属鉱山株式会社 Method for growing lithium niobate single crystal

Also Published As

Publication number Publication date
JPS5912632B2 (en) 1984-03-24

Similar Documents

Publication Publication Date Title
JPS5263877A (en) Pulling up apparatus of single crystal
JPS5234752A (en) Photomodulator
JPS5437944A (en) Apparatuses operation controller
JPS5244103A (en) Trouble wave breaking equipment
JPS5226066A (en) Sedimentation concentration apparatus
JPS5219082A (en) Production method of semiconductor
JPS51126186A (en) Stress measurement method using liquid crystal
JPS51140199A (en) Crystal working process
JPS5384750A (en) Orientation method of liquid crystal panel
JPS5271137A (en) Buffer memory
JPS5267838A (en) High frequency heater
JPS5217609A (en) Motor
JPS5315384A (en) Preparation of methylpiperazinones
JPS5237375A (en) Device for aranging moving intervals of articles to be carried
JPS51142916A (en) Driving method for dc discharge display panel
JPS51142973A (en) Production method of flat multi figure display unit
JPS5258169A (en) Impinging type separator
JPS53116329A (en) Crystallization of hydroquinone
JPS523946A (en) Hydraulic thrust device
JPS5212531A (en) Operation systm of gas discharge panel
JPS5267837A (en) High frequency heater
JPS5211558A (en) Method of recording hanging load of crane
JPS5246863A (en) Digital alarm clock
JPS52112083A (en) Sequence controller
JPS5219889A (en) Temperature controller