JPS5265199A - Method of pyrolytically depositing siliconnitride on substrate - Google Patents

Method of pyrolytically depositing siliconnitride on substrate

Info

Publication number
JPS5265199A
JPS5265199A JP13939176A JP13939176A JPS5265199A JP S5265199 A JPS5265199 A JP S5265199A JP 13939176 A JP13939176 A JP 13939176A JP 13939176 A JP13939176 A JP 13939176A JP S5265199 A JPS5265199 A JP S5265199A
Authority
JP
Japan
Prior art keywords
siliconnitride
substrate
pyrolytically depositing
pyrolytically
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13939176A
Other languages
Japanese (ja)
Other versions
JPS6010108B2 (en
Inventor
Chiyaaruzu Goorudoman Jiyon
Burian Puraisu Jieemuzu
Donarudo Matsukumiran Rarii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS5265199A publication Critical patent/JPS5265199A/en
Publication of JPS6010108B2 publication Critical patent/JPS6010108B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP51139391A 1975-11-25 1976-11-19 Method for pyrolytically depositing silicon nitride onto a substrate Expired JPS6010108B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63501275A 1975-11-25 1975-11-25
US635012 1975-11-25

Publications (2)

Publication Number Publication Date
JPS5265199A true JPS5265199A (en) 1977-05-30
JPS6010108B2 JPS6010108B2 (en) 1985-03-15

Family

ID=24546063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51139391A Expired JPS6010108B2 (en) 1975-11-25 1976-11-19 Method for pyrolytically depositing silicon nitride onto a substrate

Country Status (5)

Country Link
JP (1) JPS6010108B2 (en)
DE (1) DE2652449C2 (en)
FR (1) FR2332802A1 (en)
GB (1) GB1518564A (en)
HK (1) HK881A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071970A (en) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd Method for manufacturing silicon substrate for solar cell and system for manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118848C2 (en) * 1980-05-12 1983-05-19 Mitsubishi Denki K.K., Tokyo Low pressure coating device
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JPH0248706U (en) * 1988-09-27 1990-04-04
FR2759362B1 (en) * 1997-02-10 1999-03-12 Saint Gobain Vitrage TRANSPARENT SUBSTRATE EQUIPPED WITH AT LEAST ONE THIN LAYER BASED ON SILICON NITRIDE OR OXYNITRIDE AND ITS PROCESS FOR OBTAINING IT
CN115142048B (en) * 2022-06-30 2023-07-07 北海惠科半导体科技有限公司 Method for preparing wafer carrier and silicon nitride dielectric film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251287C2 (en) * 1962-09-10 1975-10-09 United Aircraft Corporation, East Hartford, Conn. (V.St.A.) PROCESS FOR THE PRODUCTION OF NON-POROUS SILICON NITRIDE
FR1521174A (en) * 1966-05-02 1968-04-12 Siemens Ag Process for producing a protective layer, in particular on the surface of a semiconductor crystal
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071970A (en) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd Method for manufacturing silicon substrate for solar cell and system for manufacturing the same

Also Published As

Publication number Publication date
FR2332802B1 (en) 1981-12-24
GB1518564A (en) 1978-07-19
JPS6010108B2 (en) 1985-03-15
FR2332802A1 (en) 1977-06-24
DE2652449C2 (en) 1982-06-09
DE2652449A1 (en) 1977-05-26
HK881A (en) 1981-01-23

Similar Documents

Publication Publication Date Title
JPS51135919A (en) Method of forming protecive film on glass substrate
JPS51147515A (en) Method of painting glass substrate
JPS52115785A (en) Process for coating substrate
JPS51135835A (en) Metallizing method
JPS5278834A (en) Process for manufacturing organic silylamine
JPS51127135A (en) Surface coating method
GB1546945A (en) Amorphous selemium coating
JPS51127112A (en) Method of producing multiilayered glass substrate
JPS5265199A (en) Method of pyrolytically depositing siliconnitride on substrate
JPS51122770A (en) Method of manufacturing throughhholed printed substrate
JPS51141738A (en) Method of depositing luthenium
JPS536314A (en) Method of forming vapourrplated coating on glass
JPS5253808A (en) Method of manufacturing butendiol diacetate
JPS5277890A (en) Method of manufacturing carriers
JPS51138762A (en) Coating method
JPS5242564A (en) Coating process
JPS5226470A (en) Method of mounting ceramic substrate
JPS5235872A (en) Method of producing printed substrate
JPS5258873A (en) Method of producing printed substrate
JPS524573A (en) Method of coating
JPS539816A (en) Method of manufacturing inorganic substrate
SU572269A1 (en) Method of preparing suppositories
JPS51126931A (en) Method of surface metallizing
GB1539272A (en) Process for depositing conductive layers on substrates
JPS5238169A (en) Method of producing printed substrate