JPS5267268A - Formation of oxidization film - Google Patents

Formation of oxidization film

Info

Publication number
JPS5267268A
JPS5267268A JP50143472A JP14347275A JPS5267268A JP S5267268 A JPS5267268 A JP S5267268A JP 50143472 A JP50143472 A JP 50143472A JP 14347275 A JP14347275 A JP 14347275A JP S5267268 A JPS5267268 A JP S5267268A
Authority
JP
Japan
Prior art keywords
formation
oxidization film
oxidization
film
siliconsubstrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50143472A
Other languages
Japanese (ja)
Other versions
JPS5826661B2 (en
Inventor
Takeshi Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50143472A priority Critical patent/JPS5826661B2/en
Priority to CA266,270A priority patent/CA1074630A/en
Priority to GB49901/76A priority patent/GB1549256A/en
Priority to NL7613392A priority patent/NL7613392A/en
Priority to FR7636267A priority patent/FR2334200A1/en
Priority to DE19762654493 priority patent/DE2654493A1/en
Publication of JPS5267268A publication Critical patent/JPS5267268A/en
Publication of JPS5826661B2 publication Critical patent/JPS5826661B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To ensure formation of oxidization film containing no impurity, and also to prevent lamination fault occurrence for siliconsubstrate.
COPYRIGHT: (C)1977,JPO&Japio
JP50143472A 1975-12-01 1975-12-01 Sankamakuno Keiseihouhou Expired JPS5826661B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP50143472A JPS5826661B2 (en) 1975-12-01 1975-12-01 Sankamakuno Keiseihouhou
CA266,270A CA1074630A (en) 1975-12-01 1976-11-22 Method of forming an oxide layer on a silicon substrate
GB49901/76A GB1549256A (en) 1975-12-01 1976-11-30 Methods of forming an oxide layer on silicon
NL7613392A NL7613392A (en) 1975-12-01 1976-12-01 METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE.
FR7636267A FR2334200A1 (en) 1975-12-01 1976-12-01 PROCESS FOR FORMING AN OXIDE LAYER ON A SILICON SUBSTRATE
DE19762654493 DE2654493A1 (en) 1975-12-01 1976-12-01 METHOD FOR GENERATING AN OXIDE LAYER ON A SILICONE SUBSTRATE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143472A JPS5826661B2 (en) 1975-12-01 1975-12-01 Sankamakuno Keiseihouhou

Publications (2)

Publication Number Publication Date
JPS5267268A true JPS5267268A (en) 1977-06-03
JPS5826661B2 JPS5826661B2 (en) 1983-06-04

Family

ID=15339483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50143472A Expired JPS5826661B2 (en) 1975-12-01 1975-12-01 Sankamakuno Keiseihouhou

Country Status (6)

Country Link
JP (1) JPS5826661B2 (en)
CA (1) CA1074630A (en)
DE (1) DE2654493A1 (en)
FR (1) FR2334200A1 (en)
GB (1) GB1549256A (en)
NL (1) NL7613392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111785612A (en) * 2020-08-21 2020-10-16 中电晶华(天津)半导体材料有限公司 A kind of preparation method of silicon dioxide layer for VDMOS power device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3142548A1 (en) * 1981-10-27 1983-05-05 Siemens AG, 1000 Berlin und 8000 München Process for producing oxide layers on substrate wafers consisting of silicon or another oxidisable material in an extremely dry oxygen atmosphere or in an oxygen atmosphere with hydrogen chloride gas added

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111785612A (en) * 2020-08-21 2020-10-16 中电晶华(天津)半导体材料有限公司 A kind of preparation method of silicon dioxide layer for VDMOS power device
CN111785612B (en) * 2020-08-21 2022-05-17 中电晶华(天津)半导体材料有限公司 A kind of preparation method of silicon dioxide layer for VDMOS power device

Also Published As

Publication number Publication date
NL7613392A (en) 1977-06-03
CA1074630A (en) 1980-04-01
DE2654493A1 (en) 1977-06-08
FR2334200B1 (en) 1983-02-11
FR2334200A1 (en) 1977-07-01
JPS5826661B2 (en) 1983-06-04
GB1549256A (en) 1979-08-01

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