JPS5267629A - Method for removing posi-type photoresist - Google Patents

Method for removing posi-type photoresist

Info

Publication number
JPS5267629A
JPS5267629A JP50142994A JP14299475A JPS5267629A JP S5267629 A JPS5267629 A JP S5267629A JP 50142994 A JP50142994 A JP 50142994A JP 14299475 A JP14299475 A JP 14299475A JP S5267629 A JPS5267629 A JP S5267629A
Authority
JP
Japan
Prior art keywords
posi
type photoresist
type
photoresist
naphthoquine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50142994A
Other languages
Japanese (ja)
Inventor
Hisao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50142994A priority Critical patent/JPS5267629A/en
Publication of JPS5267629A publication Critical patent/JPS5267629A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide a method for removing posi-type photoresist of naphthoquine diazide type at normal temperature using hydrazine (aqueous solution), with washing after removal being performed with cheap water.
JP50142994A 1975-12-03 1975-12-03 Method for removing posi-type photoresist Pending JPS5267629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50142994A JPS5267629A (en) 1975-12-03 1975-12-03 Method for removing posi-type photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50142994A JPS5267629A (en) 1975-12-03 1975-12-03 Method for removing posi-type photoresist

Publications (1)

Publication Number Publication Date
JPS5267629A true JPS5267629A (en) 1977-06-04

Family

ID=15328460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50142994A Pending JPS5267629A (en) 1975-12-03 1975-12-03 Method for removing posi-type photoresist

Country Status (1)

Country Link
JP (1) JPS5267629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183445A (en) * 1987-01-27 1988-07-28 Okuno Seiyaku Kogyo Kk Stripping agent for water soluble resist film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183445A (en) * 1987-01-27 1988-07-28 Okuno Seiyaku Kogyo Kk Stripping agent for water soluble resist film

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