JPS5268351A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5268351A
JPS5268351A JP50143974A JP14397475A JPS5268351A JP S5268351 A JPS5268351 A JP S5268351A JP 50143974 A JP50143974 A JP 50143974A JP 14397475 A JP14397475 A JP 14397475A JP S5268351 A JPS5268351 A JP S5268351A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
floating structure
integration density
preventing malfunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50143974A
Other languages
Japanese (ja)
Inventor
Toshio Futami
Kazutoshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50143974A priority Critical patent/JPS5268351A/en
Publication of JPS5268351A publication Critical patent/JPS5268351A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To enhance integration density of semiconductor integrated circuit of floating structure with stabilized operation by preventing malfunction against property deterioration, induction noise, etc.
JP50143974A 1975-12-05 1975-12-05 Semiconductor integrated circuit Pending JPS5268351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50143974A JPS5268351A (en) 1975-12-05 1975-12-05 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143974A JPS5268351A (en) 1975-12-05 1975-12-05 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5268351A true JPS5268351A (en) 1977-06-07

Family

ID=15351371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50143974A Pending JPS5268351A (en) 1975-12-05 1975-12-05 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5268351A (en)

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