JPS5280779A - Production of simiconductor device - Google Patents
Production of simiconductor deviceInfo
- Publication number
- JPS5280779A JPS5280779A JP15746575A JP15746575A JPS5280779A JP S5280779 A JPS5280779 A JP S5280779A JP 15746575 A JP15746575 A JP 15746575A JP 15746575 A JP15746575 A JP 15746575A JP S5280779 A JPS5280779 A JP S5280779A
- Authority
- JP
- Japan
- Prior art keywords
- production
- simiconductor
- simiconductor device
- soften
- relax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent disconnection by irradiating phosphosilicate glass with infrared rays of a wavelength of 9 - 10μm to heat and thereby soften it so as to relax difference in level.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15746575A JPS5280779A (en) | 1975-12-27 | 1975-12-27 | Production of simiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15746575A JPS5280779A (en) | 1975-12-27 | 1975-12-27 | Production of simiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5280779A true JPS5280779A (en) | 1977-07-06 |
| JPS5756770B2 JPS5756770B2 (en) | 1982-12-01 |
Family
ID=15650251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15746575A Granted JPS5280779A (en) | 1975-12-27 | 1975-12-27 | Production of simiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5280779A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56500912A (en) * | 1979-07-24 | 1981-07-02 | ||
| JPS56116687U (en) * | 1980-02-06 | 1981-09-07 | ||
| JPS56167334A (en) * | 1980-04-28 | 1981-12-23 | Fairchild Camera Instr Co | Method of heating material with sio2 as base |
| JPS5731144A (en) * | 1980-07-31 | 1982-02-19 | Fujitsu Ltd | Mamufacture of semiconductor device |
| JPS5769748A (en) * | 1980-10-17 | 1982-04-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57162447A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5844746A (en) * | 1981-09-10 | 1983-03-15 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
| JPS5944846A (en) * | 1982-09-07 | 1984-03-13 | Fujitsu Ltd | Manufacture of semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6097777U (en) * | 1983-12-08 | 1985-07-03 | 帝人製機株式会社 | Melt spinning equipment |
-
1975
- 1975-12-27 JP JP15746575A patent/JPS5280779A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56500912A (en) * | 1979-07-24 | 1981-07-02 | ||
| JPS56116687U (en) * | 1980-02-06 | 1981-09-07 | ||
| JPS56167334A (en) * | 1980-04-28 | 1981-12-23 | Fairchild Camera Instr Co | Method of heating material with sio2 as base |
| JPS5731144A (en) * | 1980-07-31 | 1982-02-19 | Fujitsu Ltd | Mamufacture of semiconductor device |
| JPS5769748A (en) * | 1980-10-17 | 1982-04-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57162447A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5844746A (en) * | 1981-09-10 | 1983-03-15 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
| JPS5944846A (en) * | 1982-09-07 | 1984-03-13 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5756770B2 (en) | 1982-12-01 |
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