JPS5287367A - Pinhole detection method for dielectric film on semiconductors - Google Patents

Pinhole detection method for dielectric film on semiconductors

Info

Publication number
JPS5287367A
JPS5287367A JP366376A JP366376A JPS5287367A JP S5287367 A JPS5287367 A JP S5287367A JP 366376 A JP366376 A JP 366376A JP 366376 A JP366376 A JP 366376A JP S5287367 A JPS5287367 A JP S5287367A
Authority
JP
Japan
Prior art keywords
semiconductors
detection method
dielectric film
pinhole detection
pinhole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP366376A
Other languages
Japanese (ja)
Other versions
JPS5823937B2 (en
Inventor
Katsuhiro Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP366376A priority Critical patent/JPS5823937B2/en
Publication of JPS5287367A publication Critical patent/JPS5287367A/en
Publication of JPS5823937B2 publication Critical patent/JPS5823937B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: In detecting pinholes using electrochemical phenomena, viologen bromide compound being an electrochromism material is used as a depositing material, whereby the determination of pinhole size and shape may be nondestructively and readily performed at low voltage.
COPYRIGHT: (C)1977,JPO&Japio
JP366376A 1976-01-14 1976-01-14 Pinhole detection method in dielectric film on semiconductor Expired JPS5823937B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP366376A JPS5823937B2 (en) 1976-01-14 1976-01-14 Pinhole detection method in dielectric film on semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP366376A JPS5823937B2 (en) 1976-01-14 1976-01-14 Pinhole detection method in dielectric film on semiconductor

Publications (2)

Publication Number Publication Date
JPS5287367A true JPS5287367A (en) 1977-07-21
JPS5823937B2 JPS5823937B2 (en) 1983-05-18

Family

ID=11563679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP366376A Expired JPS5823937B2 (en) 1976-01-14 1976-01-14 Pinhole detection method in dielectric film on semiconductor

Country Status (1)

Country Link
JP (1) JPS5823937B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141178A (en) * 2020-03-04 2021-09-16 株式会社カネカ Method for determining quality of coating film, method for determining quality of insulating layer, method of manufacturing base material having coating film, and solar cell having insulating layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141178A (en) * 2020-03-04 2021-09-16 株式会社カネカ Method for determining quality of coating film, method for determining quality of insulating layer, method of manufacturing base material having coating film, and solar cell having insulating layer

Also Published As

Publication number Publication date
JPS5823937B2 (en) 1983-05-18

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