JPS5287988A - High dielectric strength semiconductor device - Google Patents

High dielectric strength semiconductor device

Info

Publication number
JPS5287988A
JPS5287988A JP414776A JP414776A JPS5287988A JP S5287988 A JPS5287988 A JP S5287988A JP 414776 A JP414776 A JP 414776A JP 414776 A JP414776 A JP 414776A JP S5287988 A JPS5287988 A JP S5287988A
Authority
JP
Japan
Prior art keywords
dielectric strength
semiconductor device
high dielectric
forming
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP414776A
Other languages
Japanese (ja)
Inventor
Hirotoshi Toida
Kenryo Kawada
Keiichi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP414776A priority Critical patent/JPS5287988A/en
Publication of JPS5287988A publication Critical patent/JPS5287988A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: Forward voltage drop is reduced and dielectric strength is increased by forming deep annular or stripe-form grooves deeper than the PN junction faces at the edges of the PN junctions formed in a semiconductor substrate, burying the inside of these grooves with a glass film, forming a depression at the center of the surface opposite to the grooves and forming an opposite electrode therein.
COPYRIGHT: (C)1977,JPO&Japio
JP414776A 1976-01-19 1976-01-19 High dielectric strength semiconductor device Pending JPS5287988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP414776A JPS5287988A (en) 1976-01-19 1976-01-19 High dielectric strength semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP414776A JPS5287988A (en) 1976-01-19 1976-01-19 High dielectric strength semiconductor device

Publications (1)

Publication Number Publication Date
JPS5287988A true JPS5287988A (en) 1977-07-22

Family

ID=11576654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP414776A Pending JPS5287988A (en) 1976-01-19 1976-01-19 High dielectric strength semiconductor device

Country Status (1)

Country Link
JP (1) JPS5287988A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432076A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Mesa-type semiconductor device
JP2004510329A (en) * 2000-09-21 2004-04-02 ケンブリッジ　セミコンダクター　リミテッド Semiconductor device and method of forming semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432076A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Mesa-type semiconductor device
JP2004510329A (en) * 2000-09-21 2004-04-02 ケンブリッジ　セミコンダクター　リミテッド Semiconductor device and method of forming semiconductor device

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