JPS53108030A - Method of producing high purity and multicrystalline silicon - Google Patents

Method of producing high purity and multicrystalline silicon

Info

Publication number
JPS53108030A
JPS53108030A JP2260977A JP2260977A JPS53108030A JP S53108030 A JPS53108030 A JP S53108030A JP 2260977 A JP2260977 A JP 2260977A JP 2260977 A JP2260977 A JP 2260977A JP S53108030 A JPS53108030 A JP S53108030A
Authority
JP
Japan
Prior art keywords
high purity
producing high
multicrystalline silicon
multicrystalline
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2260977A
Other languages
Japanese (ja)
Other versions
JPS5645852B2 (en
Inventor
Yoshifumi Yakagi
Riyouichi Hayashi
Yukiyasu Nakajiyou
Kunio Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP2260977A priority Critical patent/JPS53108030A/en
Priority to NZ18661478A priority patent/NZ186614A/en
Publication of JPS53108030A publication Critical patent/JPS53108030A/en
Publication of JPS5645852B2 publication Critical patent/JPS5645852B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2260977A 1977-03-04 1977-03-04 Method of producing high purity and multicrystalline silicon Granted JPS53108030A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2260977A JPS53108030A (en) 1977-03-04 1977-03-04 Method of producing high purity and multicrystalline silicon
NZ18661478A NZ186614A (en) 1977-03-04 1978-03-03 Sanitary napkin exterior cover a blend of rayon and polypropylene fibres

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2260977A JPS53108030A (en) 1977-03-04 1977-03-04 Method of producing high purity and multicrystalline silicon

Publications (2)

Publication Number Publication Date
JPS53108030A true JPS53108030A (en) 1978-09-20
JPS5645852B2 JPS5645852B2 (en) 1981-10-29

Family

ID=12087572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2260977A Granted JPS53108030A (en) 1977-03-04 1977-03-04 Method of producing high purity and multicrystalline silicon

Country Status (2)

Country Link
JP (1) JPS53108030A (en)
NZ (1) NZ186614A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002100777A1 (en) * 2001-06-06 2002-12-19 Tokuyama Corporation Method of manufacturing silicon
JP2009538265A (en) * 2006-05-22 2009-11-05 コリア リサーチ インスティチュート オブ ケミカル テクノロジー Method for producing high purity polycrystalline silicon rod using metal core means
JP2013234114A (en) * 2012-05-07 2013-11-21 Wacker Chemie Ag Polycrystalline silicon rod and method for producing the same
CN113371717A (en) * 2021-06-10 2021-09-10 青海亚洲硅业半导体有限公司 Method for preparing polysilicon by sectional control

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002100777A1 (en) * 2001-06-06 2002-12-19 Tokuyama Corporation Method of manufacturing silicon
US6784079B2 (en) 2001-06-06 2004-08-31 Tokuyama Corporation Method of manufacturing silicon
JP2009538265A (en) * 2006-05-22 2009-11-05 コリア リサーチ インスティチュート オブ ケミカル テクノロジー Method for producing high purity polycrystalline silicon rod using metal core means
US8216643B2 (en) 2006-05-22 2012-07-10 Korea Research Institute Of Chemical Technology Methods for preparation of high-purity polysilicon rods using a metallic core means
JP2013234114A (en) * 2012-05-07 2013-11-21 Wacker Chemie Ag Polycrystalline silicon rod and method for producing the same
CN113371717A (en) * 2021-06-10 2021-09-10 青海亚洲硅业半导体有限公司 Method for preparing polysilicon by sectional control
CN113371717B (en) * 2021-06-10 2022-12-27 青海亚洲硅业半导体有限公司 Method for preparing polysilicon by sectional control

Also Published As

Publication number Publication date
NZ186614A (en) 1980-12-19
JPS5645852B2 (en) 1981-10-29

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