JPS53143166A - Production and producing apparatus of semiconductor epitaxial layer - Google Patents

Production and producing apparatus of semiconductor epitaxial layer

Info

Publication number
JPS53143166A
JPS53143166A JP5921877A JP5921877A JPS53143166A JP S53143166 A JPS53143166 A JP S53143166A JP 5921877 A JP5921877 A JP 5921877A JP 5921877 A JP5921877 A JP 5921877A JP S53143166 A JPS53143166 A JP S53143166A
Authority
JP
Japan
Prior art keywords
production
epitaxial layer
producing apparatus
semiconductor epitaxial
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5921877A
Other languages
Japanese (ja)
Other versions
JPS6025023B2 (en
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP52059218A priority Critical patent/JPS6025023B2/en
Publication of JPS53143166A publication Critical patent/JPS53143166A/en
Publication of JPS6025023B2 publication Critical patent/JPS6025023B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simultaneously grow multilayers of epitaxial layers on the surfaces of upper and lower substrates by mounting single crystal substrates on the surfaces of rotating bodies of upper and lower parts, by leaving a slight spacing therebetween, beforehand prividing plural melt reservoirs on the circumferential edge part of the lower rotating body and rotating the rotating bodies to let the substrates subsequently contact the melts.
COPYRIGHT: (C)1978,JPO&Japio
JP52059218A 1977-05-20 1977-05-20 Manufacturing method and device for semiconductor epitaxial layer Expired JPS6025023B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52059218A JPS6025023B2 (en) 1977-05-20 1977-05-20 Manufacturing method and device for semiconductor epitaxial layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52059218A JPS6025023B2 (en) 1977-05-20 1977-05-20 Manufacturing method and device for semiconductor epitaxial layer

Publications (2)

Publication Number Publication Date
JPS53143166A true JPS53143166A (en) 1978-12-13
JPS6025023B2 JPS6025023B2 (en) 1985-06-15

Family

ID=13107012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52059218A Expired JPS6025023B2 (en) 1977-05-20 1977-05-20 Manufacturing method and device for semiconductor epitaxial layer

Country Status (1)

Country Link
JP (1) JPS6025023B2 (en)

Also Published As

Publication number Publication date
JPS6025023B2 (en) 1985-06-15

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