JPS5319772A - Semiconductor device having diode function - Google Patents

Semiconductor device having diode function

Info

Publication number
JPS5319772A
JPS5319772A JP7537077A JP7537077A JPS5319772A JP S5319772 A JPS5319772 A JP S5319772A JP 7537077 A JP7537077 A JP 7537077A JP 7537077 A JP7537077 A JP 7537077A JP S5319772 A JPS5319772 A JP S5319772A
Authority
JP
Japan
Prior art keywords
semiconductor device
diode function
diode
function
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7537077A
Other languages
Japanese (ja)
Inventor
Buruuno Pakooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of JPS5319772A publication Critical patent/JPS5319772A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/411PN diodes having planar bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/619Combinations of lateral BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/031Manufacture or treatment of isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7537077A 1976-06-25 1977-06-24 Semiconductor device having diode function Pending JPS5319772A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24696/76A IT1063522B (en) 1976-06-25 1976-06-25 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT

Publications (1)

Publication Number Publication Date
JPS5319772A true JPS5319772A (en) 1978-02-23

Family

ID=11214430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7537077A Pending JPS5319772A (en) 1976-06-25 1977-06-24 Semiconductor device having diode function

Country Status (7)

Country Link
JP (1) JPS5319772A (en)
BR (1) BR7703967A (en)
DE (1) DE2728083A1 (en)
FR (1) FR2356274A1 (en)
GB (1) GB1525557A (en)
IT (1) IT1063522B (en)
SE (1) SE422641B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150383A (en) * 1984-12-25 1986-07-09 Toshiba Corp Semiconductor device
JPS6343455U (en) * 1986-09-03 1988-03-23

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
DE9301093U1 (en) * 1993-01-27 1994-05-26 Ic - Haus Gmbh, 55294 Bodenheim Circuit arrangement for reducing parasitic currents on integrated structures, in particular resistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150383A (en) * 1984-12-25 1986-07-09 Toshiba Corp Semiconductor device
JPS6343455U (en) * 1986-09-03 1988-03-23

Also Published As

Publication number Publication date
FR2356274A1 (en) 1978-01-20
GB1525557A (en) 1978-09-20
SE422641B (en) 1982-03-15
IT1063522B (en) 1985-02-11
FR2356274B1 (en) 1982-02-26
SE7707251L (en) 1977-12-26
BR7703967A (en) 1978-05-16
DE2728083A1 (en) 1978-01-12

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