JPS5327362A - Method of forming compound semiconductor crystal - Google Patents

Method of forming compound semiconductor crystal

Info

Publication number
JPS5327362A
JPS5327362A JP10238876A JP10238876A JPS5327362A JP S5327362 A JPS5327362 A JP S5327362A JP 10238876 A JP10238876 A JP 10238876A JP 10238876 A JP10238876 A JP 10238876A JP S5327362 A JPS5327362 A JP S5327362A
Authority
JP
Japan
Prior art keywords
compound semiconductor
semiconductor crystal
forming compound
forming
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10238876A
Other languages
Japanese (ja)
Other versions
JPS614171B2 (en
Inventor
Kouji Ootsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP10238876A priority Critical patent/JPS5327362A/en
Publication of JPS5327362A publication Critical patent/JPS5327362A/en
Publication of JPS614171B2 publication Critical patent/JPS614171B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10238876A 1976-08-27 1976-08-27 Method of forming compound semiconductor crystal Granted JPS5327362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10238876A JPS5327362A (en) 1976-08-27 1976-08-27 Method of forming compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10238876A JPS5327362A (en) 1976-08-27 1976-08-27 Method of forming compound semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5327362A true JPS5327362A (en) 1978-03-14
JPS614171B2 JPS614171B2 (en) 1986-02-07

Family

ID=14326055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10238876A Granted JPS5327362A (en) 1976-08-27 1976-08-27 Method of forming compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5327362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103314A (en) * 1980-12-18 1982-06-26 New Japan Radio Co Ltd Method for liquid phase epitaxial growth
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103314A (en) * 1980-12-18 1982-06-26 New Japan Radio Co Ltd Method for liquid phase epitaxial growth
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process

Also Published As

Publication number Publication date
JPS614171B2 (en) 1986-02-07

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