JPS5330264A - Protection system for self-arc extinction type semiconductor element - Google Patents

Protection system for self-arc extinction type semiconductor element

Info

Publication number
JPS5330264A
JPS5330264A JP10427776A JP10427776A JPS5330264A JP S5330264 A JPS5330264 A JP S5330264A JP 10427776 A JP10427776 A JP 10427776A JP 10427776 A JP10427776 A JP 10427776A JP S5330264 A JPS5330264 A JP S5330264A
Authority
JP
Japan
Prior art keywords
self
arc extinction
type semiconductor
semiconductor element
protection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10427776A
Other languages
Japanese (ja)
Other versions
JPS593113B2 (en
Inventor
Sukeo Saitou
Akio Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51104277A priority Critical patent/JPS593113B2/en
Publication of JPS5330264A publication Critical patent/JPS5330264A/en
Publication of JPS593113B2 publication Critical patent/JPS593113B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE: To increase the forward voltage change dv/dt quantity resistance of GTO (self-arc extinction type semidonductor element) by means of a simpleconstitution protection circuit and to apply a negative gate signal only during the period of the increase of the quantity increase. Thus, the loss of the gate circuit can be decreased.
COPYRIGHT: (C)1978,JPO&Japio
JP51104277A 1976-09-02 1976-09-02 Protection circuit for self-extinguishing semiconductor devices Expired JPS593113B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51104277A JPS593113B2 (en) 1976-09-02 1976-09-02 Protection circuit for self-extinguishing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51104277A JPS593113B2 (en) 1976-09-02 1976-09-02 Protection circuit for self-extinguishing semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5330264A true JPS5330264A (en) 1978-03-22
JPS593113B2 JPS593113B2 (en) 1984-01-23

Family

ID=14376421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51104277A Expired JPS593113B2 (en) 1976-09-02 1976-09-02 Protection circuit for self-extinguishing semiconductor devices

Country Status (1)

Country Link
JP (1) JPS593113B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5554791A (en) * 1978-10-18 1980-04-22 Kankyo Kaihatsu Kk Method and device for preventing gas leakage from already laid gas pipe

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224214U (en) * 1985-07-27 1987-02-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5554791A (en) * 1978-10-18 1980-04-22 Kankyo Kaihatsu Kk Method and device for preventing gas leakage from already laid gas pipe

Also Published As

Publication number Publication date
JPS593113B2 (en) 1984-01-23

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