JPS5351982A - Iil device - Google Patents

Iil device

Info

Publication number
JPS5351982A
JPS5351982A JP12608576A JP12608576A JPS5351982A JP S5351982 A JPS5351982 A JP S5351982A JP 12608576 A JP12608576 A JP 12608576A JP 12608576 A JP12608576 A JP 12608576A JP S5351982 A JPS5351982 A JP S5351982A
Authority
JP
Japan
Prior art keywords
iil device
iil
integration
lowering
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12608576A
Other languages
Japanese (ja)
Inventor
Mitsuo Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12608576A priority Critical patent/JPS5351982A/en
Publication of JPS5351982A publication Critical patent/JPS5351982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture I<2>L device in which the lowering in integration is prevented and the speed and power consumption product PD is increased, with a given constitution.
JP12608576A 1976-10-22 1976-10-22 Iil device Pending JPS5351982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12608576A JPS5351982A (en) 1976-10-22 1976-10-22 Iil device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12608576A JPS5351982A (en) 1976-10-22 1976-10-22 Iil device

Publications (1)

Publication Number Publication Date
JPS5351982A true JPS5351982A (en) 1978-05-11

Family

ID=14926223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12608576A Pending JPS5351982A (en) 1976-10-22 1976-10-22 Iil device

Country Status (1)

Country Link
JP (1) JPS5351982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736854A (en) * 1980-08-15 1982-02-27 Pioneer Electronic Corp Integrated circuit device
JPS5748254A (en) * 1980-09-05 1982-03-19 Hitachi Ltd Iil semiconductor device
JPS58115847A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd I2l circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935030A (en) * 1972-08-03 1974-04-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935030A (en) * 1972-08-03 1974-04-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736854A (en) * 1980-08-15 1982-02-27 Pioneer Electronic Corp Integrated circuit device
JPS5748254A (en) * 1980-09-05 1982-03-19 Hitachi Ltd Iil semiconductor device
JPS58115847A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd I2l circuit device

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