JPS5353280A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5353280A
JPS5353280A JP12780976A JP12780976A JPS5353280A JP S5353280 A JPS5353280 A JP S5353280A JP 12780976 A JP12780976 A JP 12780976A JP 12780976 A JP12780976 A JP 12780976A JP S5353280 A JPS5353280 A JP S5353280A
Authority
JP
Japan
Prior art keywords
layer
manufacture
semiconductor device
wiring layer
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12780976A
Other languages
Japanese (ja)
Other versions
JPS5917540B2 (en
Inventor
Toshio Yonezawa
Shunichi Kai
Yutaka Etsuno
Takashi Yasujima
Yoshitami Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12780976A priority Critical patent/JPS5917540B2/en
Priority to GB34781/77A priority patent/GB1548520A/en
Priority to DE2738384A priority patent/DE2738384C2/en
Publication of JPS5353280A publication Critical patent/JPS5353280A/en
Priority to US06/262,938 priority patent/US4351894A/en
Publication of JPS5917540B2 publication Critical patent/JPS5917540B2/en
Priority to US06/632,239 priority patent/US4560642A/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain the Al wiring layer having a good shape, by providing the pattern of SiC or Si3N4 on the Al wiring layer coated on the semiconductor element surface, and performing the etching of taper shape on the exposed surface of the Al layer and the interface layer with the Al layer and the film taking this as a mask.
COPYRIGHT: (C)1978,JPO&Japio
JP12780976A 1976-08-27 1976-10-26 Wiring formation method for semiconductor devices Expired JPS5917540B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP12780976A JPS5917540B2 (en) 1976-10-26 1976-10-26 Wiring formation method for semiconductor devices
GB34781/77A GB1548520A (en) 1976-08-27 1977-08-18 Method of manufacturing a semiconductor device
DE2738384A DE2738384C2 (en) 1976-08-27 1977-08-25 Method for producing a semiconductor device
US06/262,938 US4351894A (en) 1976-08-27 1981-05-12 Method of manufacturing a semiconductor device using silicon carbide mask
US06/632,239 US4560642A (en) 1976-08-27 1984-07-19 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12780976A JPS5917540B2 (en) 1976-10-26 1976-10-26 Wiring formation method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5353280A true JPS5353280A (en) 1978-05-15
JPS5917540B2 JPS5917540B2 (en) 1984-04-21

Family

ID=14969199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12780976A Expired JPS5917540B2 (en) 1976-08-27 1976-10-26 Wiring formation method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5917540B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529587B2 (en) 2016-06-10 2020-01-07 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529587B2 (en) 2016-06-10 2020-01-07 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5917540B2 (en) 1984-04-21

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