JPS5368084A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368084A
JPS5368084A JP14319676A JP14319676A JPS5368084A JP S5368084 A JPS5368084 A JP S5368084A JP 14319676 A JP14319676 A JP 14319676A JP 14319676 A JP14319676 A JP 14319676A JP S5368084 A JPS5368084 A JP S5368084A
Authority
JP
Japan
Prior art keywords
semiconductor device
electron
impruties
excite
recombination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14319676A
Other languages
Japanese (ja)
Other versions
JPS5635315B2 (en
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14319676A priority Critical patent/JPS5368084A/en
Publication of JPS5368084A publication Critical patent/JPS5368084A/en
Publication of JPS5635315B2 publication Critical patent/JPS5635315B2/ja
Granted legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To excite an ultra-low frequency oscillation through a recombination with the positive hole which is caused by the electron catch and the sloping occurrence, by injecting impruties at the junction part of the first and second semiconductor layers and providing a deep electron trap.
COPYRIGHT: (C)1978,JPO&Japio
JP14319676A 1976-11-29 1976-11-29 Semiconductor device Granted JPS5368084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14319676A JPS5368084A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14319676A JPS5368084A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5368084A true JPS5368084A (en) 1978-06-17
JPS5635315B2 JPS5635315B2 (en) 1981-08-15

Family

ID=15333094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14319676A Granted JPS5368084A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368084A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020141154A (en) * 2016-11-14 2020-09-03 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ III-V semiconductor diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020141154A (en) * 2016-11-14 2020-09-03 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ III-V semiconductor diode

Also Published As

Publication number Publication date
JPS5635315B2 (en) 1981-08-15

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FAINBERG et al. Quasi-linear theory of the excitation of oscillations by an electron beam injected into a plasma half-space(Electrical oscillation excitation by electron beam injected into plasma half-space, noting boundary transition layer)