JPS5372472A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5372472A
JPS5372472A JP14803676A JP14803676A JPS5372472A JP S5372472 A JPS5372472 A JP S5372472A JP 14803676 A JP14803676 A JP 14803676A JP 14803676 A JP14803676 A JP 14803676A JP S5372472 A JPS5372472 A JP S5372472A
Authority
JP
Japan
Prior art keywords
semiconductor device
integrate
mos transistor
high density
protective diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14803676A
Other languages
Japanese (ja)
Inventor
Akira Miyamoto
Michihiro Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14803676A priority Critical patent/JPS5372472A/en
Publication of JPS5372472A publication Critical patent/JPS5372472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To integrate with high density, by adding the floating preventing resistor and protective diode to C-MOS transistor.
JP14803676A 1976-12-08 1976-12-08 Semiconductor device Pending JPS5372472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14803676A JPS5372472A (en) 1976-12-08 1976-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14803676A JPS5372472A (en) 1976-12-08 1976-12-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372472A true JPS5372472A (en) 1978-06-27

Family

ID=15443674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14803676A Pending JPS5372472A (en) 1976-12-08 1976-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372472A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117166U (en) * 1979-02-09 1980-08-19
EP0032018A1 (en) * 1979-12-24 1981-07-15 Fujitsu Limited Semiconductor integrated circuit device
JPS5958839A (en) * 1982-09-28 1984-04-04 Fujitsu Ltd Semiconductor device
JPS59227154A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117166U (en) * 1979-02-09 1980-08-19
EP0032018A1 (en) * 1979-12-24 1981-07-15 Fujitsu Limited Semiconductor integrated circuit device
JPS5958839A (en) * 1982-09-28 1984-04-04 Fujitsu Ltd Semiconductor device
JPS59227154A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
DE3072175D1 (en) SEMICONDUCTOR DEVICES WITH HETEROUITION.
NL176322C (en) SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT.
ES237290Y (en) AN ABSORBING ARTICLE.
NL7702458A (en) DOCUMENT SUPPLY DEVICE.
NL7704226A (en) SEMICONDUCTOR LASER DEVICE.
NO770990L (en) VALVE DEVICE.
AU2090876A (en) Semiconductor F. E. T. device
NL7710614A (en) SAFETY DEVICE.
NO141825C (en) INJECTION DEVICE.
NO770693L (en) PROTECTIVE SHIELD DEVICE.
NL185766C (en) Ejection seat construction with arm protection device.
NL170826C (en) Injection molding device.
NL173572B (en) SEMICONDUCTOR DEVICE.
FR2349216A1 (en) SELF-PROTECTED SEMICONDUCTOR DEVICE
NL7700283A (en) SEMICONDUCTOR INJECTION LASER.
NL7613476A (en) POWER TAKE-OFF DEVICE.
NL7711410A (en) MOORING DEVICE.
NL7611495A (en) GRINDING DEVICE.
NL7705486A (en) SEAT BELT RETRACTION DEVICE.
NL7612384A (en) LIQUID DIODE.
JPS5414180A (en) Semiconductor laser unit
NL7708369A (en) INTEGRATED SEMICONDUCTOR CHAIN.
SE7613014L (en) DEVICE AT THE SEAT BELT.
NL7702781A (en) FEEDING DEVICE.
NL7705207A (en) DEVICE WITH PARTICLE OPTIC.