JPS5376750A - Anodic oxidation method - Google Patents

Anodic oxidation method

Info

Publication number
JPS5376750A
JPS5376750A JP15194176A JP15194176A JPS5376750A JP S5376750 A JPS5376750 A JP S5376750A JP 15194176 A JP15194176 A JP 15194176A JP 15194176 A JP15194176 A JP 15194176A JP S5376750 A JPS5376750 A JP S5376750A
Authority
JP
Japan
Prior art keywords
anodic oxidation
oxidation method
insualtion
good yield
radiating light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15194176A
Other languages
Japanese (ja)
Inventor
Toshiaki Ikoma
Hirokuni Tokuda
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15194176A priority Critical patent/JPS5376750A/en
Priority to US05/825,720 priority patent/US4157610A/en
Publication of JPS5376750A publication Critical patent/JPS5376750A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrochemical Coating By Surface Reaction (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form an insualtion film selectively at a good yield by performing anodic oxidation while radiating light to the portions desired to be formed.
COPYRIGHT: (C)1978,JPO&Japio
JP15194176A 1976-12-20 1976-12-20 Anodic oxidation method Pending JPS5376750A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15194176A JPS5376750A (en) 1976-12-20 1976-12-20 Anodic oxidation method
US05/825,720 US4157610A (en) 1976-12-20 1977-08-18 Method of manufacturing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15194176A JPS5376750A (en) 1976-12-20 1976-12-20 Anodic oxidation method

Publications (1)

Publication Number Publication Date
JPS5376750A true JPS5376750A (en) 1978-07-07

Family

ID=15529546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15194176A Pending JPS5376750A (en) 1976-12-20 1976-12-20 Anodic oxidation method

Country Status (1)

Country Link
JP (1) JPS5376750A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102047A (en) * 1980-12-17 1982-06-24 Matsushita Electric Ind Co Ltd Manufacture of amorphous semiconductor device
JP2008130709A (en) * 2006-11-20 2008-06-05 Ricoh Co Ltd Semiconductor laser manufacturing method, semiconductor laser manufacturing apparatus, semiconductor laser, optical scanning apparatus, image forming apparatus, optical transmission module, and optical transmission system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102047A (en) * 1980-12-17 1982-06-24 Matsushita Electric Ind Co Ltd Manufacture of amorphous semiconductor device
JP2008130709A (en) * 2006-11-20 2008-06-05 Ricoh Co Ltd Semiconductor laser manufacturing method, semiconductor laser manufacturing apparatus, semiconductor laser, optical scanning apparatus, image forming apparatus, optical transmission module, and optical transmission system

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