JPS538580A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS538580A
JPS538580A JP8273976A JP8273976A JPS538580A JP S538580 A JPS538580 A JP S538580A JP 8273976 A JP8273976 A JP 8273976A JP 8273976 A JP8273976 A JP 8273976A JP S538580 A JPS538580 A JP S538580A
Authority
JP
Japan
Prior art keywords
semiconductor device
impurity density
works
increasing
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8273976A
Other languages
Japanese (ja)
Inventor
Tsunetaka Sudo
Akira Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8273976A priority Critical patent/JPS538580A/en
Publication of JPS538580A publication Critical patent/JPS538580A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an I<2>L which works at a high speed, by increasing the impurity density of emitter region of NPN transistor which makes switching working, and by reducing the impurity density of base region of PNP transistor.
JP8273976A 1976-07-12 1976-07-12 Semiconductor device Pending JPS538580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8273976A JPS538580A (en) 1976-07-12 1976-07-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8273976A JPS538580A (en) 1976-07-12 1976-07-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS538580A true JPS538580A (en) 1978-01-26

Family

ID=13782773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8273976A Pending JPS538580A (en) 1976-07-12 1976-07-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS538580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735365A (en) * 1980-08-13 1982-02-25 Nec Corp Semiconductor device
JPS57113272A (en) * 1980-12-29 1982-07-14 Pioneer Electronic Corp I2l integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735365A (en) * 1980-08-13 1982-02-25 Nec Corp Semiconductor device
JPS57113272A (en) * 1980-12-29 1982-07-14 Pioneer Electronic Corp I2l integrated circuit device

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