JPS5390882A - Supercurrent tunneling element - Google Patents

Supercurrent tunneling element

Info

Publication number
JPS5390882A
JPS5390882A JP547477A JP547477A JPS5390882A JP S5390882 A JPS5390882 A JP S5390882A JP 547477 A JP547477 A JP 547477A JP 547477 A JP547477 A JP 547477A JP S5390882 A JPS5390882 A JP S5390882A
Authority
JP
Japan
Prior art keywords
supercurrent
layer
tellurium
tunneling element
voltage state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP547477A
Other languages
Japanese (ja)
Other versions
JPS5730314B2 (en
Inventor
Takahiro Inamura
Kenichi Kuroda
Koichi Nagata
Azusa Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP547477A priority Critical patent/JPS5390882A/en
Publication of JPS5390882A publication Critical patent/JPS5390882A/en
Publication of JPS5730314B2 publication Critical patent/JPS5730314B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE: To increase the switching speed from the finite voltage state to the zero voltage state, by providing the tellurium layer, chalcogenite glass layer, silicon single crystal layer of 1019/cm3 or more, amorphous-state tellurium film and tellurium oxide layer between two superconductors.
COPYRIGHT: (C)1978,JPO&Japio
JP547477A 1977-01-21 1977-01-21 Supercurrent tunneling element Granted JPS5390882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP547477A JPS5390882A (en) 1977-01-21 1977-01-21 Supercurrent tunneling element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP547477A JPS5390882A (en) 1977-01-21 1977-01-21 Supercurrent tunneling element

Publications (2)

Publication Number Publication Date
JPS5390882A true JPS5390882A (en) 1978-08-10
JPS5730314B2 JPS5730314B2 (en) 1982-06-28

Family

ID=11612235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP547477A Granted JPS5390882A (en) 1977-01-21 1977-01-21 Supercurrent tunneling element

Country Status (1)

Country Link
JP (1) JPS5390882A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610985A (en) * 1979-07-10 1981-02-03 Agency Of Ind Science & Technol Field control type superconductive multiterminal element
US4490733A (en) * 1982-10-15 1984-12-25 Sperry Corporation Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN#V13#N5#M10=1970 *
IBM TECHNICAL PISCLOSURE BULLETIN#V17#N9#M2=1975 *
TRANSACTIONS OF IEEE MAGNETICS#V11#N2#M3=1975 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610985A (en) * 1979-07-10 1981-02-03 Agency Of Ind Science & Technol Field control type superconductive multiterminal element
US4490733A (en) * 1982-10-15 1984-12-25 Sperry Corporation Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Also Published As

Publication number Publication date
JPS5730314B2 (en) 1982-06-28

Similar Documents

Publication Publication Date Title
JPS51144183A (en) Semiconductor element containing surface protection film
JPS53104156A (en) Manufacture for semiconductor device
JPS5390882A (en) Supercurrent tunneling element
JPS53128285A (en) Semiconductor device and production of the same
JPS5442163A (en) Liquid crystal display device
JPS5313382A (en) Manufacture of thin-film light electromotive element
JPS5336471A (en) Manufacture of semiconductor device
JPS52137275A (en) Separation of semiconductor elements
JPS5290281A (en) Semiconductor laser device
JPS5356969A (en) Production of tape for tape carrier
JPS51145267A (en) Manufacture of semiconductor device
JPS5213484A (en) Storage type liquid crystal composition
JPS5273748A (en) Photo-modulator
JPS5432993A (en) Manufacture of electric-field luminous device
JPS51138167A (en) Production method of semiconductor device
JPS51126891A (en) Ion selective electrode with semiconductor crystal as the sensitive el ement
JPS5287374A (en) Soi type semiconductor device
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS52146698A (en) Combustible gas detecting element
JPS52141565A (en) Manufacture of semiconductor unit
JPS5399881A (en) Manufacture of dielectric separation substrate
JPS5245270A (en) Semiconductor device
JPS5384569A (en) Semiconductor device
JPS538728A (en) Trnsistor chopper device
JPS5373976A (en) Manufacture for schottky barrier type semiconductor device