JPS54129992A - Photo receiver circuit - Google Patents

Photo receiver circuit

Info

Publication number
JPS54129992A
JPS54129992A JP3767678A JP3767678A JPS54129992A JP S54129992 A JPS54129992 A JP S54129992A JP 3767678 A JP3767678 A JP 3767678A JP 3767678 A JP3767678 A JP 3767678A JP S54129992 A JPS54129992 A JP S54129992A
Authority
JP
Japan
Prior art keywords
frequency
diode
components
amplified
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3767678A
Other languages
Japanese (ja)
Inventor
Junichi Yamada
Kazuhiro Oguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3767678A priority Critical patent/JPS54129992A/en
Publication of JPS54129992A publication Critical patent/JPS54129992A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE: To extract signals from DC components to high-frequency components completely by grounding one side of an avalanche photo diode and by adding low-frequency components extracted by a transistor to amplified high-frequency components.
CONSTITUTION: The cathode of avalanche photo diode 301 is grounded, and a high-frequency component is extracted from the contact between bias resistance 302 and the anode to resistance 305 via capacitor 304 and then amplified 308. The anode of diode 301, on the other hand, is connected to the base of low-frequency transistor 307 with higher dielectric strength than the breakdown voltage of diode 301 and components from DC one to high-frequency one included in an electric signal are amplified 309 and added 310 to the output of high-frequency amplifier 308, so that output 311 can be obtained which includes from a DC component to high-frequency one. As for a gain, phase characteristics, a delay time, etc., amplifiers 308 and 309 are adjusted to flatten frequency characteristics of output 311. Since one terminal of diode 301 is grounded, influence of floating capacity is removed, and high-frequency reception becomes possible.
COPYRIGHT: (C)1979,JPO&Japio
JP3767678A 1978-03-31 1978-03-31 Photo receiver circuit Pending JPS54129992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3767678A JPS54129992A (en) 1978-03-31 1978-03-31 Photo receiver circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3767678A JPS54129992A (en) 1978-03-31 1978-03-31 Photo receiver circuit

Publications (1)

Publication Number Publication Date
JPS54129992A true JPS54129992A (en) 1979-10-08

Family

ID=12504215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3767678A Pending JPS54129992A (en) 1978-03-31 1978-03-31 Photo receiver circuit

Country Status (1)

Country Link
JP (1) JPS54129992A (en)

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