JPS5414155A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5414155A
JPS5414155A JP8029377A JP8029377A JPS5414155A JP S5414155 A JPS5414155 A JP S5414155A JP 8029377 A JP8029377 A JP 8029377A JP 8029377 A JP8029377 A JP 8029377A JP S5414155 A JPS5414155 A JP S5414155A
Authority
JP
Japan
Prior art keywords
bonding
manufacture
semiconductor device
fixed substrate
arrived
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8029377A
Other languages
Japanese (ja)
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8029377A priority Critical patent/JPS5414155A/en
Publication of JPS5414155A publication Critical patent/JPS5414155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE: To prevent the dicing knife from being arrived at the hard fixed substrate and the swelling of bonding materials at the bonding, by using bonding material immersing the bonding agent on porous and thick paper layer when the semiconductor wafer and the fixed substrate are bonded together.
COPYRIGHT: (C)1979,JPO&Japio
JP8029377A 1977-07-04 1977-07-04 Manufacture for semiconductor device Pending JPS5414155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8029377A JPS5414155A (en) 1977-07-04 1977-07-04 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8029377A JPS5414155A (en) 1977-07-04 1977-07-04 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5414155A true JPS5414155A (en) 1979-02-02

Family

ID=13714215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8029377A Pending JPS5414155A (en) 1977-07-04 1977-07-04 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5414155A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133231A (en) * 1975-05-02 1976-11-18 Basf Ag Process for manufacturing nnalkyll or nnalkenyllcarbamic acid ester
JPS58100443A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Cutting of wafer
JPS61112345A (en) * 1984-11-07 1986-05-30 Toshiba Corp Manufacture of semiconductor device
US6184109B1 (en) 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6337258B1 (en) 1999-07-22 2002-01-08 Kabushiki Kaisha Toshiba Method of dividing a wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133231A (en) * 1975-05-02 1976-11-18 Basf Ag Process for manufacturing nnalkyll or nnalkenyllcarbamic acid ester
JPS58100443A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Cutting of wafer
JPS61112345A (en) * 1984-11-07 1986-05-30 Toshiba Corp Manufacture of semiconductor device
US6184109B1 (en) 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6337258B1 (en) 1999-07-22 2002-01-08 Kabushiki Kaisha Toshiba Method of dividing a wafer

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