JPS54143185A - Temperature detecting circuit - Google Patents

Temperature detecting circuit

Info

Publication number
JPS54143185A
JPS54143185A JP4093678A JP4093678A JPS54143185A JP S54143185 A JPS54143185 A JP S54143185A JP 4093678 A JP4093678 A JP 4093678A JP 4093678 A JP4093678 A JP 4093678A JP S54143185 A JPS54143185 A JP S54143185A
Authority
JP
Japan
Prior art keywords
fets
difference
voltage
detecting circuit
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4093678A
Other languages
Japanese (ja)
Other versions
JPS6120802B2 (en
Inventor
Mitsumasa Iwamoto
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4093678A priority Critical patent/JPS54143185A/en
Publication of JPS54143185A publication Critical patent/JPS54143185A/en
Publication of JPS6120802B2 publication Critical patent/JPS6120802B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Control Of Electrical Variables (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To improve the performance of an integrated temperature detecting circuit by making a reference power source of complementary type FETs and by using the difference between the threshold values of the FETs. CONSTITUTION:A bias circuit for determining a reference voltage is constructed to include FETs 211 and 212 of P and N channels having an equal value of beta, and a resistor 217. On the other hand, if FETs 213 and 214 of P and N channels have an equal value of beta, and if resistors 215 and 216 have an equal resistance, the output potential Vo at a terminal 218 is expressed by Equation - 1. As a result, since the potential Vo is given as the difference between the threshold voltage values of the FETs of P and N channels, the temperature characteristics of the voltage difference are used to detect the temperature. Moreover, since the voltage Vo is not dependent upon the supply voltage but uses the difference between the threshold voltages, the fluctuations not only between the elements but also between the resistances can be eliminated so that the performance of the integrated detecting circuit can be improved.
JP4093678A 1978-04-07 1978-04-07 Temperature detecting circuit Granted JPS54143185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4093678A JPS54143185A (en) 1978-04-07 1978-04-07 Temperature detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4093678A JPS54143185A (en) 1978-04-07 1978-04-07 Temperature detecting circuit

Publications (2)

Publication Number Publication Date
JPS54143185A true JPS54143185A (en) 1979-11-08
JPS6120802B2 JPS6120802B2 (en) 1986-05-23

Family

ID=12594378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4093678A Granted JPS54143185A (en) 1978-04-07 1978-04-07 Temperature detecting circuit

Country Status (1)

Country Link
JP (1) JPS54143185A (en)

Also Published As

Publication number Publication date
JPS6120802B2 (en) 1986-05-23

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