JPS54145200A - Gas sensitive element - Google Patents
Gas sensitive elementInfo
- Publication number
- JPS54145200A JPS54145200A JP5237178A JP5237178A JPS54145200A JP S54145200 A JPS54145200 A JP S54145200A JP 5237178 A JP5237178 A JP 5237178A JP 5237178 A JP5237178 A JP 5237178A JP S54145200 A JPS54145200 A JP S54145200A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- catalyst layer
- sensitive
- sensitive body
- gas sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 abstract 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 4
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 abstract 4
- 239000003054 catalyst Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000001282 iso-butane Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 abstract 2
- 230000032683 aging Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
PURPOSE: To obtain a gas sensitive element of high reliability which is not sensitive to alcohol-base gases and is highly sensitive to isobutane gas by providing a catalyst layer composed of a specified amount of Rh and P of the specific times that on the surface of a zinc oxide base sensitive body.
CONSTITUTION: A pair of electrodes are provided on the outside peripheral surface of a tubular insulation substrate 1 and a gas sensitive body 3 composed of zinc oxide base semiconductor is provided so as to cover said tubular substrate 1 and electrodes 2. Further on the surface of the gas sensitive body 3 is provided a catalyst layer 4 composed of silica, alumina or other containing 0.005 to 8 wt% of Rh and P of 1.5 to 30 times the Rh at a molar ratio. Since the catalyst layer and gas sensitive body are separated in this way, the manufacture becomes easy and the gas sensitve element for LPG which is superior in aging characteristics and has high sensitivity only to the isobutane gas may be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53052371A JPS58624B2 (en) | 1978-05-02 | 1978-05-02 | gas sensing element |
| US06/033,251 US4242303A (en) | 1978-05-02 | 1979-04-25 | Gas detecting element |
| CA000326589A CA1118494A (en) | 1978-05-02 | 1979-04-30 | Gas detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53052371A JPS58624B2 (en) | 1978-05-02 | 1978-05-02 | gas sensing element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54145200A true JPS54145200A (en) | 1979-11-13 |
| JPS58624B2 JPS58624B2 (en) | 1983-01-07 |
Family
ID=12912938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53052371A Expired JPS58624B2 (en) | 1978-05-02 | 1978-05-02 | gas sensing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58624B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5533609A (en) * | 1978-08-31 | 1980-03-08 | Toshiba Corp | Gas-sensitive element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61178127A (en) * | 1985-01-31 | 1986-08-09 | Sekisui Chem Co Ltd | Turning apparatus of panel for building |
-
1978
- 1978-05-02 JP JP53052371A patent/JPS58624B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5533609A (en) * | 1978-08-31 | 1980-03-08 | Toshiba Corp | Gas-sensitive element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58624B2 (en) | 1983-01-07 |
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