JPS54150968A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JPS54150968A
JPS54150968A JP5960578A JP5960578A JPS54150968A JP S54150968 A JPS54150968 A JP S54150968A JP 5960578 A JP5960578 A JP 5960578A JP 5960578 A JP5960578 A JP 5960578A JP S54150968 A JPS54150968 A JP S54150968A
Authority
JP
Japan
Prior art keywords
cap
heat treatment
gas
supply inlet
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5960578A
Other languages
Japanese (ja)
Other versions
JPS5849015B2 (en
Inventor
Shoji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5960578A priority Critical patent/JPS5849015B2/en
Publication of JPS54150968A publication Critical patent/JPS54150968A/en
Publication of JPS5849015B2 publication Critical patent/JPS5849015B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the reverse current of the gas and thus to secure a uniform thickness for the semiconductor wafer by fitting the end cap with the barrier plate containing plural notches inside to the opening part of the heat treatment tube having the gas supply inlet at one end and an opening at the other end.
CONSTITUTION: Gas supply inlet 2 is provided at one end part of heat treatment tube 1 surrounded by heating device 6, and opening part 3 is secured at the other end. Then end cap 4 having gas supply inlet 5 is fitted into part 3, and at the same time barrier plates 7aW7c of disk form holding notch parts 8aW8c at the outer circumference and featuring almost same diameter as cap 4 are attached within cap 4. In this case parts 8aW8c are provided alternately up and down, and also gas passing gap parts 9aW9c caused by attachment of barrier plates is set less than 1/3 the inner diameter of cap 4. As a result, the reverse current of gas going toward the uniform-heating part of tube 1 can be eliminated by exhausted in the form of the disturbed current, thus ensuring the uniform heat treatment for the stored semiconductor wafer.
COPYRIGHT: (C)1979,JPO&Japio
JP5960578A 1978-05-18 1978-05-18 heat treatment equipment Expired JPS5849015B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5960578A JPS5849015B2 (en) 1978-05-18 1978-05-18 heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5960578A JPS5849015B2 (en) 1978-05-18 1978-05-18 heat treatment equipment

Publications (2)

Publication Number Publication Date
JPS54150968A true JPS54150968A (en) 1979-11-27
JPS5849015B2 JPS5849015B2 (en) 1983-11-01

Family

ID=13118044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5960578A Expired JPS5849015B2 (en) 1978-05-18 1978-05-18 heat treatment equipment

Country Status (1)

Country Link
JP (1) JPS5849015B2 (en)

Also Published As

Publication number Publication date
JPS5849015B2 (en) 1983-11-01

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