JPS54155772A - Fine pattern forming method - Google Patents

Fine pattern forming method

Info

Publication number
JPS54155772A
JPS54155772A JP6479278A JP6479278A JPS54155772A JP S54155772 A JPS54155772 A JP S54155772A JP 6479278 A JP6479278 A JP 6479278A JP 6479278 A JP6479278 A JP 6479278A JP S54155772 A JPS54155772 A JP S54155772A
Authority
JP
Japan
Prior art keywords
fine
rays
film
pattern
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6479278A
Other languages
Japanese (ja)
Other versions
JPS574895B2 (en
Inventor
Toshisuke Kitakoji
Yasuhiro Yoneda
Tateo Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6479278A priority Critical patent/JPS54155772A/en
Publication of JPS54155772A publication Critical patent/JPS54155772A/en
Publication of JPS574895B2 publication Critical patent/JPS574895B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE: To obtain a fine pattern by irradiating a positive type resist of basic structure of ester methacrylate with fine rays of light of high energy for exposure and then by dissolving and removing an unirradiated part by development in a ring etherbased solvent.
CONSTITUTION: Onto substrate 1, copper foil 2 is stuck and on it, positive type resist film 3 of three-dimentional mesh structure of ester methacrylate represented by poly-methyl methacrylate is applied. On it, mask is positioned and electron beams or X rays are caused to strike the mask, thereby drawing a fine pattern by rays of light focusing finely. Then, film 3 is dipped in a ring ether-based solvent of high sensitivity for development and an unirradiated part is dissolved and removed to obtain fine resist pattern 5. After patterning, film 5 sticking onto copper foil 2 is peeled off to obtain exactly the same pattern 6 as the drawing.
COPYRIGHT: (C)1979,JPO&Japio
JP6479278A 1978-05-30 1978-05-30 Fine pattern forming method Granted JPS54155772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6479278A JPS54155772A (en) 1978-05-30 1978-05-30 Fine pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6479278A JPS54155772A (en) 1978-05-30 1978-05-30 Fine pattern forming method

Publications (2)

Publication Number Publication Date
JPS54155772A true JPS54155772A (en) 1979-12-08
JPS574895B2 JPS574895B2 (en) 1982-01-28

Family

ID=13268430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6479278A Granted JPS54155772A (en) 1978-05-30 1978-05-30 Fine pattern forming method

Country Status (1)

Country Link
JP (1) JPS54155772A (en)

Also Published As

Publication number Publication date
JPS574895B2 (en) 1982-01-28

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