JPS5417258B1 - - Google Patents
Info
- Publication number
- JPS5417258B1 JPS5417258B1 JP2691172A JP2691172A JPS5417258B1 JP S5417258 B1 JPS5417258 B1 JP S5417258B1 JP 2691172 A JP2691172 A JP 2691172A JP 2691172 A JP2691172 A JP 2691172A JP S5417258 B1 JPS5417258 B1 JP S5417258B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
- H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12513371A | 1971-03-17 | 1971-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5417258B1 true JPS5417258B1 (2) | 1979-06-28 |
Family
ID=22418325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2691172A Pending JPS5417258B1 (2) | 1971-03-17 | 1972-03-16 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3761895A (2) |
| JP (1) | JPS5417258B1 (2) |
| DE (1) | DE2212527A1 (2) |
| FR (1) | FR2130438B1 (2) |
| GB (1) | GB1351421A (2) |
| IT (1) | IT950246B (2) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3914600A (en) * | 1974-07-25 | 1975-10-21 | Us Army | Electron image integration intensifier tube |
| US4064495A (en) * | 1976-03-22 | 1977-12-20 | General Electric Company | Ion implanted archival memory media and methods for storage of data therein |
| US4081794A (en) * | 1976-04-02 | 1978-03-28 | General Electric Company | Alloy junction archival memory plane and methods for writing data thereon |
| US4068218A (en) * | 1976-10-04 | 1978-01-10 | Micro-Bit Corporation | Method and apparatus for deep depletion read-out of MOS electron beam addressable memories |
| US4079358A (en) * | 1976-10-04 | 1978-03-14 | Micro-Bit Corporation | Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same |
| US4128897A (en) * | 1977-03-22 | 1978-12-05 | General Electric Company | Archival memory media and method for information recording thereon |
| US4190849A (en) * | 1977-09-19 | 1980-02-26 | Motorola, Inc. | Electronic-beam programmable semiconductor device structure |
| US4212082A (en) * | 1978-04-21 | 1980-07-08 | General Electric Company | Method for fabrication of improved storage target and target produced thereby |
| US4197144A (en) * | 1978-09-21 | 1980-04-08 | General Electric Company | Method for improving writing of information in memory targets |
| US4213192A (en) * | 1979-01-15 | 1980-07-15 | Christensen Alton O Sr | Electron beam accessed read-write-erase random access memory |
| DE2938568A1 (de) * | 1979-09-24 | 1981-04-09 | Siemens AG, 1000 Berlin und 8000 München | N-kanal-speicher-fet |
| JPS5755591A (en) * | 1980-09-19 | 1982-04-02 | Hitachi Ltd | Information recording method |
| US4575822A (en) * | 1983-02-15 | 1986-03-11 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for data storage using tunnel current data readout |
| US4624533A (en) * | 1983-04-06 | 1986-11-25 | Eaton Corporation | Solid state display |
| US4583833A (en) * | 1984-06-07 | 1986-04-22 | Xerox Corporation | Optical recording using field-effect control of heating |
| US4878213A (en) * | 1984-09-14 | 1989-10-31 | Xerox Corporation | System for recording and readout of information at atomic scale densities and method therefor |
| US4907195A (en) * | 1984-09-14 | 1990-03-06 | Xerox Corporation | Method of and system for atomic scale recording of information |
| US4829507A (en) * | 1984-09-14 | 1989-05-09 | Xerox Corporation | Method of and system for atomic scale readout of recorded information |
| US4613519A (en) * | 1985-03-18 | 1986-09-23 | The United State Of America As Represented By The United States Department Of Energy | Electron-beam-induced information storage in hydrogenated amorphous silicon device |
| US4826732A (en) * | 1987-03-16 | 1989-05-02 | Xerox Corporation | Recording medium |
| US4956817A (en) * | 1988-05-26 | 1990-09-11 | Quanscan, Inc. | High density data storage and retrieval system |
| US5235542A (en) * | 1989-04-03 | 1993-08-10 | Ricoh Company, Ltd. | Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element |
| US5051977A (en) * | 1989-08-30 | 1991-09-24 | Hoechst Celanese Corp. | Scanning tunneling microscope memory utilizing optical fluorescence of substrate for reading |
| US5166919A (en) * | 1991-07-11 | 1992-11-24 | International Business Machines Corporation | Atomic scale electronic switch |
| US6507552B2 (en) * | 2000-12-01 | 2003-01-14 | Hewlett-Packard Company | AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1201659A (en) * | 1967-09-25 | 1970-08-12 | Atomic Energy Authority Uk | Improvements in or relating to memory devices |
| US3458782A (en) * | 1967-10-18 | 1969-07-29 | Bell Telephone Labor Inc | Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production |
| US3599181A (en) * | 1967-12-07 | 1971-08-10 | Atomic Energy Authority Uk | Solid state computer memory device |
| US3576392A (en) * | 1968-06-26 | 1971-04-27 | Rca Corp | Semiconductor vidicon target having electronically alterable light response characteristics |
| US3668473A (en) * | 1969-06-24 | 1972-06-06 | Tokyo Shibaura Electric Co | Photosensitive semi-conductor device |
| US3701979A (en) * | 1970-01-09 | 1972-10-31 | Micro Bit Corp | Slow write-fast read memory method and system |
-
1971
- 1971-03-17 US US00125133A patent/US3761895A/en not_active Expired - Lifetime
-
1972
- 1972-03-15 DE DE19722212527 patent/DE2212527A1/de not_active Withdrawn
- 1972-03-16 IT IT21916/72A patent/IT950246B/it active
- 1972-03-16 GB GB1221472A patent/GB1351421A/en not_active Expired
- 1972-03-16 JP JP2691172A patent/JPS5417258B1/ja active Pending
- 1972-03-17 FR FR7209557A patent/FR2130438B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2130438B1 (2) | 1976-10-29 |
| GB1351421A (en) | 1974-05-01 |
| IT950246B (it) | 1973-06-20 |
| FR2130438A1 (2) | 1972-11-03 |
| DE2212527A1 (de) | 1972-10-19 |
| US3761895A (en) | 1973-09-25 |